KTC3199 JIANGSU | Alldatasheet

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TO – 92S 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3199 TRANSISTOR (NPN)

FEATURES

z Complementary to KTA1267 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Paramete r Value Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current 0.15 A P C Collector Power Dissipation 400 mW R θJA Thermal Resistance From Junction To Ambient 312 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ JC(T www.cj-elec.com 1www.cj-elec.com 1 32 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 C3199/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity TO-92S Bulk TO-92S Tape KTC3199 KTC3199-TA /g59/g59/g59 /g122 C3199 F,Aug,2017 1000pcs/Bag 3000pcs/Box Solid dot = Green molding compound device, if none, the normal device

www.cj-elec.com 2www.cj-elec.com F,Aug,2017 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O I C= 0.1mA,IE=0 50 V Collecto r-emitter breakdown voltage V(BR)CE O IC=1mA,IB=0 50 V Emitter-ba se breakdown voltage V(BR )EBO I E=0.1mA,IC=0 5 V Collecto r cut-off current ICBO V CB=50V ,IE=0 0.1 μA Emitter cut-off current IEBO V EB=5V ,IC=0 0.1 μA DC curr ent gain hFE V CE=6V , IC=2mA 70 700 Collecto r-emitter saturation voltage VCE(sa I C=100mA,IB=10mA 0.25 V Collecto r output capacitance Cob V CB=10V ,IE=0, f=1MHz 3.5 pF Tr ansition frequency fT V CE=10V,IC=1 mA 80 MHz CLASSIFICATION OF hFE RAN K O Y GR BL RAN GE 70-140 120-240 200-400 300-700

0.1 1 10 100 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 0.1 1 10 100 100 1 10 100 100 1000 0.1 1 10 0.1 100 200 400 600 800 1000 0.1 100 0246 8 1 0 800.4 150 ICfT — — COMM ON EMITTER VCE=10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANS ITION FREQUENCY fT (MHz) 2000 150 β=10 ICVBE sat — — BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECT OR POWER DISSIPATION PC (mW) 150 150 Ta=100 ℃ Ta=25℃ β=10 ICVCE sat — — COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURREMT IC (mA) 500 0.5 IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMM ON EMITTER VCE= 6V f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib — — Cob Cib REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) COLLECTOR CURRENT IC (mA) BASE-EM MITER VOLTAGE VBE (V) IC —— VBE T a=25℃ T a=100℃ COMM ON EMITTER VCE=6V St atic Characteristic CO MMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 80uA 72uA 64uA 56uA 48uA 40uA 32uA 24uA 16uA IB=8uA T ypical Characteristics www.cj-elec.com 3www.cj-elec.com F,Aug,2017

ol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.420 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 D 3.900 4.100 0.154 0.161 D1 2.280 2.680 0.090 0.106 E 3.050 3.250 0.120 0.128 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 15.100 15.500 0.594 0.610 θ 45° TYP. 45° TYP. www.cj-elec.com 4 F,Aug,2017

www.cj-elec.com 5 F,Aug,2017