KSD1692 JIANGSU | Alldatasheet
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TO – 126 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSD1692 TRANSISTOR (NPN)
FEATURES
z Low Collector Saturation Voltage z High Power Dissipation MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E =0 150 V Collector-emitter breakdown voltage V CEO(SUS) I C =30mA,I B =0 100 V Emitter-base breakdown voltage V (BR)EBO I E =5mA,I C =0 8 V Collector cut-off current I CBO V CB =100V,I E =0 10 μA Emitter cut-off current I EBO V EB =5V,I C =0 2 mA h FE(1) V CE =2V, I C =1.5A 2K 20K DC current gain h FE(2) V CE =2V, I C =3A 1K Collector-emitter saturation voltage V CE(sat) I C =1.5A,I B =1.5mA 1.2 V Base-emitter saturation voltage V BE(sat) I C =1.5A,I B =1.5mA 2 V *Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%. CLASSIFICATION OF h FE(1) RANK O Y G RANGE 2K-5K 4K-12K 6K-20K Symbol Parameter Value Unit V CBO Collector-Base Voltage 150 V V CEO Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 8 V I C Collector Current 3 A P C Collector Power Dissipation 1.25 W R θJA Thermal Resistance From Junction To Ambient 100 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 B,Oct,2014
www.cj-elec.com 2 B,Oct,2014 Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP