KGF1322 OKI | Alldatasheet

Document overview

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Technical content

KGF1322¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and low thermal resistance, the KGF1322 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.

FEATURES

  • High output power: 33 dBm (min.)
  • High efficiency: 60% (min.)
  • Low thermal resistance: 12°C/W (typ.)
  • Package: 3PHTP PACKAGE DIMENSIONS ¡ electronic components KGF1322 Power FET (Ceramic Package Type) E2Q0040-38-71 3.3±0.15 7.3±0.15 2.3±0.05 3.1±0.15 0.125±0.05 0.63±0.15 3.5±0.05 1.7±0.2 0.5±0.05 (Unit: mm) 4.7±0.15 1.1±0.15 4.5±0.15 Package material Pin treatment plate thickness Lead frame material Al203 Ni/Au plating Au:1.0 mm or more Fe-Ni-Co alloy

5.9 MAX

KGF1322¡ electronic components CIRCUIT MARKING X X X X MONTHLY LOT NUMBER PRODUCTION MONTH (1-9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) K1322 (1) PRODUCT NAME LOT NUMBER (2) (3) (1) Gate (2) Source (3) Drain Gate(1) Drain(3) Source(2)

KGF1322¡ electronic components ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

*1 Condition: f = 850 MHz, V DS = 5.8 V, IDSQ = 240 mA Item VDS Symbol Condition Max. Unit Drain-source voltage Gate-source voltage Total power dissipation Channel temperature V GS Ptot Tch Ta = 25°C 0.4 150 V V W Storage temperature T stg — 125 °C Min. –6.0 –45 Ta = Tc = 25°C Ta = 25°C Drain current I DS Ta = 25°C 3 A — Item PO Symbol Condition Max. Unit Output power —dBm Min. 33.0 (*1), PIN = 22 dBm Typ. —Drain efficiency hD (*1), PIN = 22 dBm % (Ta = 25°C) Thermal resistance R th °C/W — —1 2Channel to case VGS(off)Gate-source cut-off voltage –2.6 V –3.6VDS = 3 V, IDS = 4 mA — IDSSDrain current —A 2.0VDS = 1.5 V, VGS = 0 V — IDS(off)Drain-source leakage current 1.5 mA —VDS = 10 V, VGS = –6 V — IGDOGate-drain leakage current 0.5mA —VGD = –16 V — IGSSGate-source leakage current 0.1 mA —VGS = –6 V —

KGF1322¡ electronic components RF CHARACTERISTICS

KGF1322¡ electronic components Typical S Parameters Freq(MHz) 500.0 MAG(S11) ANG(S 11) MAG(S 21) ANG(S 21) MAG(S 12) ANG(S 12) MAG(S 22) ANG(S 22) VDS = 5.8 V, IDS = 240 mA 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.941 0.939 0.939 0.937 0.937 0.935 0.933 0.932 0.930 0.930 0.926 0.925 0.920 0.921 0.915 0.916 0.913 0.909 0.907 0.904 0.903 0.900 0.897 0.895 0.891 0.887 –151.20 –157.04 –161.53 –165.06 –167.96 –170.53 –172.69 –174.68 –176.46 –178.20 –179.81 178.70 177.39 175.86 174.46 173.22 171.70 170.64 169.24 167.93 166.79 165.54 164.25 163.01 161.64 160.49 3.945 3.325 2.878 2.542 2.273 2.052 1.869 1.731 1.602 1.501 1.406 1.322 1.256 1.181 1.132 1.077 1.036 0.992 0.953 0.918 0.887 0.853 0.830 0.799 0.781 0.755 95.29 90.96 86.91 80.53 77.50 75.04 72.26 70.02 67.31 64.99 62.62 60.34 58.29 53.69 51.72 49.37 47.61 45.18 43.47 41.07 39.39 37.42 35.16 33.63 0.032 0.033 0.034 0.035 0.035 0.036 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.049 0.051 0.051 0.053 0.053 0.054 0.053 24.38 23.33 22.90 22.86 23.33 23.14 23.63 23.81 24.52 24.26 24.96 25.06 25.40 25.57 25.34 25.63 25.70 25.35 25.72 25.16 25.17 24.40 23.73 23.10 21.96 22.01 0.697 0.699 0.702 0.702 0.704 0.702 0.703 0.703 0.703 0.702 0.702 0.700 0.701 0.698 0.698 0.698 0.696 0.696 0.693 0.693 0.686 0.689 0.685 0.688 0.686 0.693 –176.88 –178.02 –178.91 –179.73 179.81 178.93 178.55 177.88 177.60 176.77 176.48 175.79 175.46 174.77 174.66 173.77 173.63 172.90 172.71 172.00 171.74 171.27 171.07 170.79 170.71 170.54 55.93 83.63

KGF1322¡ electronic components Typical S Parameters VDS = 5.8 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W