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J270, J271 P-Channel Silicon Junction Field-Effect Transistor ∙ Analog Switch ∙ Sample and Hold ∙ Low Noise, High Gain Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -30V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 2.8 mW/oC At 25oC free air temperature J270 J271 Process PJ99 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS -30 -30 V IG = 1 uA, VDS = 0 V Gate Reverse Current IGSS 200 200 pA VGS = 10 V, VDS = 0 V Gate Source Cutoff Voltage VGS(OFF) 0.5 2 1.5 4.5 V VDS = -10 V, VGS = 0 V Drain Saturation Current (pulsed) IDSS -2 -15 -6 -50 mA VDS = -10 V, VGS = 0 V Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs 6 15 8 18 mS VDS = -10 V, VGS = 0 V f = 1 kHz Common-Source Input Capacitance Ciss 32 32 pF VDS = -10 V, VGS = 0 V f = 1 MHz Common-Source Reverse Transfer Capacitance Crss 4 4 pF VDS = -10 V, VGS = 0 V f = 1 MHz Typical Equivalent Short Circuit Input Noise Voltage ~eN 6 6 nV/√Hz VDS = 10 V, ID = 5 mA f = 1 kHz www.interfet.com 715 N. Glenville Dr., Ste. 400 Richardson, TX 75089 (972) 238-9700 Fax (972) 238-5338 SMP2608, SMP2609 SMPJ270, SMPJ271