J232 INTERFET | Alldatasheet
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N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: J232 Process NJ16 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 250 pA V GS = – 30V, VDS = ØV Gate Operating Current I G – 2 pA V DS = 20V, ID = ØV Gate Source Cutoff Voltage V GS(OFF) – 3 – 6 V V DS = 20V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 51 0 m A V DS = 20V, VGS = Ø V Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 2500 5000 µS V DS = 20V, VGS = Ø V f = 1 kHz Common Source Output Conductance g os 5µ S V DS = 20V, VGS = Ø V f = 1 kHz Common Source Input Capacitance C iss 4p F V DS = 20V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Crss 1 pF VDS = 20V, VGS = Ø V f = 1 MHzCapacitance Equivalent Short Circuit ¯eN 20 30 nV/√Hz VDS = 10V, VGS = Ø V f = 10 Hz Input Noise Voltage 6 nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz ¥ Audio Amplifier 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-59