J231 INTERFET | Alldatasheet
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J230, J231 N-Channel Silicon Junction Field-Effect Transistor ¥ Audio Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMPJ230, SMPJ231 At 25°C free air temperature: J230 J231 Process NJ16 Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 – 40 V I G = – 1µA, VDS = ØV Gate Reverse Current I GSS – 250 – 250 pA V GS = – 30V, VDS = ØV Gate Operating Current I G – 2 – 2 pA V DS = 20V, ID = ØV Gate Source Cutoff Voltage V GS(OFF) – 0.5 – 3 – 1.5 – 5 V V DS = 20V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 0.7 3 2 6 mA V DS = 20V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward gfs 1000 3500 1500 4000 µS V DS = 20V, VGS = ØV f = 1 kHzTransconductance Common Source Output Conductance g os 1.5 3 µS V DS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance C iss 44 p F V DS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Crss 11 p F V DS = 20V, VGS = ØV f = 1 MHzTransfer Capacitance Equivalent Short Circuit Input ¯eN 83 0 83 0 nV/√Hz VDS = 10V, VGS = ØV f = 10 Hz Noise Voltage 22 nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-58