J212 INTERFET | Alldatasheet
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N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: J212 Process NJ26L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 100 pA V GS = – 15V, VDS = ØV Gate Operating Current I G – 10 pA V DS = 20V, ID = 1 mA Gate Source Cutoff Voltage V GS(OFF) – 4 – 6 V V DS = 15V, ID = 1 nA Drain Saturation Current (Pulsed) I DSS 15 40 mA V DS = 15V, VGS = Ø V Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 7000 12000 µS V DS = 15V, VGS = Ø V f = 1 kHz Common Source Output Conductance g os 200 µS V DS = 15V, VGS = Ø V f = 1 kHz Common Source Input Capacitance C iss 4p F V DS = 15V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Crss 1p F V DS = 15V, VGS = Ø V f = 1 MHzCapacitance Equivalent Short Circuit ¯eN 10 nV/√Hz VDS = 15V, VGS = Ø V f = 1 kHzInput Noise Voltage ¥ Audio Amplifier ¥ General Purpose Amplifier 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-57