J210 INTERFET | Alldatasheet
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J210, J211 N-Channel Silicon Junction Field-Effect Transistor ¥ Audio Amplifiers ¥ General Purpose Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMPJ210, SMPJ211 At 25°C free air temperature: J210 J211 Process NJ26L Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 – 25 V I G = – 1µA, VDS = ØV Gate Reverse Current I GSS – 100 – 100 pA V GS = – 15V, VDS = ØV Gate Operating Current I G – 10 – 10 pA V DS = 20V, ID = 1 mA Gate Source Cutoff Voltage V GS(OFF) – 1 – 3 – 2.5 – 4.5 V V DS = 15V, ID = 1 nA Drain Saturation Current (Pulsed) I DSS 21 5 72 0 m A V DS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward gfs 4000 12000 6000 12000 µS V DS = 15V, VGS = Ø V f = 1 kHzTransconductance Common Source Output Conductance g os 150 200 µS V DS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance C iss 44 p F V DS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Crss 11 p F V DS = 15V, VGS = ØV f = 1 MHzTransfer Capacitance Equivalent Short Circuit Input ¯eN 10 10 nV/√Hz VDS = 15V, VGS = ØV f = 1 kHzNoise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-56