J201 INTERFET | Alldatasheet
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J201, J202 N-Channel Silicon Junction Field-Effect Transistor ¥ Audio Amplifiers ¥ General Purpose Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMPJ201, SMPJ202 At 25°C free air temperature: J201 J202 Process NJ16 Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 – 40 V I G = – 1µA, VDS = ØV Gate Reverse Current I GSS – 100 – 100 pA V GS = – 20V, VDS = ØV Gate Operating Current I G – 10 – 10 pA V DG = 20V, ID = IDSS(min) Gate Source Cutoff Voltage V GS(OFF) – 0.3 – 1.5 – 0.8 – 4 V V DS = 20V, ID = 10 nA Drain Saturation Current (Pulsed) I DSS 0.2 1 0.9 4.5 mA V DSS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward gfs 500 1000 µS V DS = 20V, VGS = ØV f = 1 kHzTransconductance Common Source Output Conductance g os 1 3.5 µS V DS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance C iss 44 p F V DS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Crss 11 p F V DS = 20V, VGS = ØV f = 1 MHzTransfer Capacitance Equivalent Short Circuit Input ¯eN 55 nV/√Hz VDS = 10V, VGS = ØV f = 1 kHzNoise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-54