J108 INTERFET | Alldatasheet
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J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMPJ108, SMPJ109 At 25°C free air temperature: J108 J109 Process NJ450 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 3 – 3 nA V GS = – 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 3 – 10 – 2 – 6 V V DS = 5V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 80 40 mA V DS = 15V, VGS = ØV Drain Cutoff Current I D(OFF) 33 n A V DS = 5V, VGS = – 10V Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 81 2 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Drain Gate Capacitance C gd 15 15 pF V DS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance C gs 15 15 pF V DS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance C gd + Cgs 85 85 pF V DS = VGS = ØV f = 1 MHz Switching Characteristics Typ Typ Turn ON Delay Time td (on) 33 n s J108 J109 Rise Time t r 11 n s V DD 1.5 1.5 V Turn OFF Delay Time td (off) 44 n s VGS(OFF) – 12 – 7 V Fall Time t f 18 18 ns RL 150 150 Ω ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/14/99 1:02 PM Page B-49