IL611CMTI-1E

IL610CMTI-1E NVE | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 26

Technical content

Features

• 200 kV/µs guaranteed CMTI; to 350 kV/µs with deglit ch
• 100% tested for CMTI
• Deterministic default LOW and default HIGH versions
• Extended 3 V to 6.6 V power supply range
• Switching frequencies up to 50 Mhz
• Flexible inputs with wide input voltage range
• Input current as low as 5 mA
• No input-side power supply needed
• No reverse input protection needed
• No carrier or clock for low EMI emissions and susceptibility
• Extremely high EMI and magnetic immunity
• 2.5 kV isolation; up to 800 VRMS Working Voltage
• IEC 60747-17 (VDE 0884-17):2021-10; UL 1577
• 44000 year barrier life
• Single and dual-channel configurations
• 8-pin MSOP and SOIC packages

Applications

• H-bridges
• Floating supply applications
• Noisy environments

Description

The IL600-Series isolators are passive input digita l signal isolators with CMOS outputs. The IL6xxCMTI version is optimized for driving MOSFETs either directly or wi th an external gate driver. Resistors set the input current, and five milliamps guarantees switching. CMTI-grade isolators are 100% tested to ensure each part ha s at least 200 kV/µs minimum Common-Mode Transient Immunity. Simple external deglitch circuitry can extend the CMTI to an extraordinary 350 kV/µs typical. The parts also have an extended supply range of up to 6.6 volts for compatibility to directly drive a range of powe r MOSFETs or gate driver ICs. The devices are manufactured with NVE’s patented* IsoLoop spintronic Giant Magnetoresistive (GMR) technology for small size, high speed, and high noise immunity. A unique ceramic/polymer composite barrier provides excellent isolation and virtually unlimited barrier life.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Absolute Maximum Ratings (1) Parameters Symbol Min. Typ. Max. Units Test Conditions Storage Temperature TS −55 (2) 150 °C Ambient Operating Temperature TA −40 (3) 85 °C Supply Voltage VDD −0.5 7 V DC Input Current IIN −25 25 mA AC Input Current (Single -Ended Input) IIN −35 35 mA AC Input Current ( Differential Input) IIN −75 75 mA Output Voltage VO −0.5 VDD +1.5 V Maximum Output Current IO −10 10 mA ESD 2 kV HBM 1Operating at absolute maximum ratings will not dama ge the device. Parametric performance is not guaran teed at absolute maximum ratings. Recommended Operating Conditions Parameters Symbol Min. Typ. Max. Units Test Conditions Ambient Operating Temperature TA −40 (3) 85 °C Supply Voltage VDD 3 6 V Input Signal Rise and Fall Times tIR , t IF 1 μs VOE Logic High Input Voltage VIH 2.4 VDD 1 V VOE Logic Low Input Voltage VIL 0 0.8 V Common Mode Input Voltage VCM 10 00 VRMS Insulation Specifications Parameters Symbol Min. Typ. Max. Units Test Conditions Creepage Distance (external) MSOP 8 3.01 mm SOIC 8 4.03 mm Total Barrier Thickness (internal) 0.012 0.013 mm Leakage Current 0.2 μA 240 V RMS , 60 Hz Barrier Resistance RIO >10 14 500 V Barrier Capacitance CIO 7 Ω || pF f = 1 MHz Comparative Tracking Index CTI ≥175 V Per IEC 60112 High Voltage Endurance (maximum barrier voltage for indefinite life ) AC DC VIO 1000 1500 VRMS VDC At maximum operating temperature Barrier Life 44000 Years 100°C, 1000 V RMS , 60% CL activation energy Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditio ns Junction–Ambient Thermal Resistance MSOP8 SOIC8 θ JA 184 134 °C/W Soldered to double-sided board; free air Junction–Case (Top) Thermal Resistance MSOP8 SOIC 8 θ JT 15 10 °C/W Power Dissipation MSOP8 SOIC 8 PD 500 675 mW

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Safety and Approvals IEC 60747-17 (VDE 0884-17):2021-10 (Basic Isolation; VDE File Number 5016933-4880-0001):

• Isolation voltage (V ISO ): 2500 VRMS
• Transient overvoltage (V IOTM ): 4000 VPK
• Surge rating 4000 V
• Each part tested at 1590 VPK for 1 second, 5 pC partial discharge limit
• Samples tested at 4000 VPK for 60 sec.; then 1358 VPK for 10 sec. with 5 pC partial discharge limit
• Working Voltage (V IORM ; pollution degree 2): Package Part No. Suffix Working Voltage MSOP8 -1 800 V RMS SOIC8 -3 700 V RMS Safety-Limiting Values Symbol Value Units Safety rating ambient temperature TS 180 °C Safety rating power (180°C) PS 270 mW Supply current safety rating (total of supplies) IS 54 mA UL 1577 (Component Recognition Program File Number E207481)
• 2500 V rating.
• Each part tested at 3000 V RMS (4240 VPK ) for 1 second; each lot sample tested at2500 VRMS (3530 VPK ) for 1 minute. Soldering Profile Per JEDEC J-STD-020C; MSL 1 Electrostatic Discharge Sensitivity This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance degradation to complete failure.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Pin Connections IL610CMTI / IL610FCMTI

1 NC No internal connection

2 IN − Coil connection

3 IN + Coil connection

4 NC No internal connection

5 GND Ground return for V DD

6 OUT Data out

(i nternally held low with approx. 100 k Ω)

8 VDD Supply Voltage

1 IN 1− Channel 1 coil connection

2 IN 1+ Channel 1 coil connection

3 IN 2− Channel 2 coil connection

4 IN 2+ Channel 2 coil connection

6 OUT 2 Data out, channel 2

7 OUT 1 Data out, channel 1

Figure 1. Test circuit.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com

5 V Specifications

Parameters Symbol Min. Typ. Max. Units Test Conditions Quiescent Supply Current IL610CMTI / IL610FCMTI IDD 2 3 mA V DD = 5 V, I IN = 0 IL611CMTI / IL611FCMTI 4 6 Input Threshold IINH-DC 0.5 3 mA Input Threshold Hysteresis I INH − I INL 0.25 1 mA VDD = 5 V 0.25 0.5 VDD = 6 V Failsafe Input Current (1) IINL-FS −25 0.5 mA IINH-FS 5 25 mA High Output Voltage VOH 4.9 4.999 V VDD = 5 V, I O = 20 μA 4.0 4. 8 V VDD = 5 V, I O = 4 mA Low Output Voltage V OL 0.00 07 0.1 V VDD = 5 V, I O = −20 μA 0. 12 0.8 V VDD = 5 V, I O = −4 mA Output Stage High-Side Drain-to-Source Resistance R DS-P 40 Ω VDD = 5 V

38 VDD = 6 V

Drain-to-Source Resistance R DS-N 30 Ω VDD = 5 V

28 VDD = 6 V

Output Short-Circuit Current |I SC | 40 55 70 mA VDD = 5 V 45 65 80 VDD = 6 V 5 V Switching Specifications (V DD = 4.5 V to 6.6 V; T = −40°C to 85°C unless otherwise stated) Parameters Symbol Min. Typ. Max. Units Test Conditions Minimum Pulse Width (1) PW 10 ns Digital Drive: RL = 1 kΩ; CL = 15 pF; tIR = tIF = 3 ns Propagation Delay , Input to Output tP 8 15 ns Average Propagation Delay Drift tPLH 10 ps/°C Pulse Width Distortion |t PHL −t PLH |(2) PWD 3 5 ns Pulse Jitter tJ 100 ps Propagation Delay Skew (3) tPSK −2 2 ns Output Rise / Fall Time (10 – 90%) tR / t F 2 4 ns Minimum Pulse Width (1) PW 75 ns Driving high-power MOSFET; RL = 1 M Ω; CL = 1000 pF; tIR = tIF = 3 ns Propagation Delay, Input to Output (Output High -to -Low) tPHL 50 70 ns Propagation Delay, Input to Output (Output Low to High) tPLH 60 90 Pulse Width Distortion |t PHL −t PLH |(2) PWD 30 50 Output Rise Time (10 – 90%) tR 130 16 0 Output Fall Time (10 – 90%) tF 110 140 5 V Common Mode Transient Immunity Specifications (V DD = 4.5 V to 6.6 V; T = −40°C to 85°C unless otherwise stated) IL610CMTI / IL610FCMTI (single channel) 5 mA drive |CM H|,|CM L| 165 kV/ μs ICOIL = 0 / +5 mA 10 mA drive 200 240 ICOIL = 0 / +10 mA With external degliching 300 350 10 ns output deglitch IL611CMTI / IL611FCMTI (two channel) 5 mA drive |CM H|,|CM L| 145 kV/ μs ICOIL = 0 / +5 mA 10 mA drive 200 210 ICOIL = 0 / +10 mA With external degliching 300 350 10 ns output deglitch

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com

3.3 V Specifications

3.3 V Electrical Specifications (V DD = 3 V to 3.6 V; T = −40°C to 85°C unless otherwise stated) Parameters Symbol Min. Typ. Max. Units Test Conditions Quiescent Supply Current IL610CMTI / IL610FCMTI IDD 1.3 2 mA V DD = 3.3 V, I IN = 0 IL611CMTI / IL611FCMTI IDD 2.6 4 Input Threshold IINH-DC 0.3 1 mA IINL-DC 4 8 Single -ended Unipolar

5 Bipolar Differential

Input Threshold Hysteresis IINH - IINL 0.25 3 mA Failsafe Input Current (1) IINL-FS −25 0.3 mA High Output Voltage VOH 3.2 3.3 V VDD = 3.3 V, I O = 20 μA 3.0 3. 28 V VDD = 3.3 V, I O = 4 mA Low Output Voltage V OL 0.0 005 0.1 V VDD = 3.3 V, I O = −20 μA 0.15 0.8 V VDD = 3.3 V, I O = −4 mA Output Stage High-Side Drain -to -Source Resistance RDS-P 55 Ω Output Stage Low-Side Drain -to -Source Resistance RDS-N 38 Ω Output Short -Circuit Current |I SC | 15 25 40 mA 3.3 V Switching Specifications (V DD = 3 V to 3.6 V; T = −40°C to 85°C unless otherwise stated) Minimum Pulse Width (1) PW 10 ns Digital Drive: Figure 1 Test Circuit; RL = 1 kΩ; CL = 15 pF; tIR = tIF = 3 ns Propagation Delay, Input to Output (Output High to Low) tPHL 12 18 ns Propagation Delay, Input to Output (Output Low to High) tPLH 12 18 ns Average Propagation Delay Drift tPLH 10 ps/°C Pulse Width Distortion |t PHL −t PLH | (2) PWD 3 5 ns Propagation Delay Skew (3) tPSK −2 2 ns Output Rise / Fall Time (10 – 90%) tR / t F 3 5 ns Minimum Pulse Width (1) PW 100 ns MOSFET drive: Figure 1 Test Circuit; RL = 1 M Ω; CL = 1000 pF; tIR = tIF = 3 ns Propagation Delay, Input to Output (Output High -to -Low) tPHL 75 100 ns Propagation Delay, Input to Output (Output Low to High) tPLH 90 130 Pulse Width Distortion |t PHL −t PLH |(2) PWD 45 75 Output Rise Time (10 – 90%) tR 20 0 24 0 Output Fall Time (10 – 90%) tF 165 20 0 3.3 V Common Mode Transient Immunity Specifications (V DD = 3 V to 3.6 V; T = −40°C to 85°C unless otherwise stated) IL610CMTI / IL610FCMTI (single channel) 5 mA drive |CM H|,|CM L| 125 kV/ μs ICOIL = 0 / +5 mA 10 mA drive 175 ICOIL = 0 / +10 mA With external degliching 300 10 ns output deglitch IL611CMTI / IL611FCMTI (two channel) 5 mA drive |CM H|,|CM L| 11 0 kV/ μs ICOIL = 0 / +5 mA 10 mA drive 155 ICOIL = 0 / +10 mA With external degliching 300 10 ns output deglitch Notes: 1. “Failsafe Operation” is defined as the input curren t required to guarantee an output state on power-up . To guarantee failsafe input energization, the DC current supplied to the coil must be at least 8 mA using 3.3 V supplies versus 5 mA for 4.5 V or higher supplies. 2. Minimum Pulse Width is the shortest pulse width at which the specified PWD is guaranteed. 3. PWD is defined as | t PHL − tPLH |. 4. tPSK is equal to the magnitude of the worst case differ ence in t PHL and/or t PLH that will be seen between units at 25°C. 5. 100% tested.

side of the isolator creates a magnetic field that switches the GMR in the bridge. Thus the signal is transmitted by magnetic field. The change in the bridge is detected by a Schmitt t rigger comparator. This drives a push-pull MOSFET o utput stage. the controller starts up or in case of a loss of controller-side power. anode, and (In−) analogous to the cathode. Figure 9. Input resistors. There is no limit to input voltages because there are no semiconductor input structures. IN+ resistor approximately 50% larger than RIN- is optimal for CMTI. resistance. Note that coil resistance increases with temperature. Driver output impedance should also be considered if it is significant.

3.3 V 300 Ω 200 Ω 200 Ω 140 Ω

5 V 500 Ω 330 Ω 250 Ω 165 Ω

Table 1. Typical input resistor values. values for 10 mA drive are designed to provide 10 m A typical drive current to maximize CMTI. the logic low threshold current is 5 mA for the range of supplies.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Maximum Coil Current Absolute Maximum unipolar coil current is 25 mA, wh ile bipolar mode allows up to ±75 mA. The difference in specifications is due to the risk of electromigration of coil metals under constant current flow. Long-term unipolar DC current flow above 25 mA can cause erosion of the coil metal. In differential mode, erosion takes place in both directions as each current cycle reverses and has no net effect up to the absolute maximum curren t. An advantage over optocouplers and other high-speed couplers in differential mode is that no reverse bias protection for the input structure is required for a differential signal.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com NC V DD IN+ V OE IN- OUT NC GND Maximizing CMTI 10 mA coil current CMTI increases with coil current, up to approximate ly 10 mA. More than 10 mA does not significantly improve CMTI. Output Deglitching Deglitching significantly increases CMTI. Some MOSFET drivers have built-in degliching, or a simple de glitch circuit is shown in Figure 13. Power Supply Decoupling A 0.1 µF ceramic capacitor is recommended to decoup le the output-side power supply (V DD2). The capacitor should be as close as possible to the V DD pin. Maintaining Creepage Standard pad libraries often extend under the package, compromising creepage and clearance. Similarly, ground planes, if used, should be spaced to avoid compromising clearance. Package drawings and recommended pad layouts are included in this datasheet. Electromagnetic Compatibility and Magnetic Field Im munity IL600-Series isolators are ideal for harsh industri al environments with low emitted fields and very high external magnetic field immunity. Because IL600-Series Isolators are comple tely static, they do no emitted any EMI. Internal shielding and inherent common-mode field i mmunity IsoLoop Isolators operate by imposing a magnetic fi eld on a GMR sensor, which translates the change in field into a change in logic state. A magnetic shield and a Wheatstone Bridge configuration provide superb immunity to extern al magnetic fields. Inherent AC magnetic field immunity Unlike inductive or capacitive which transmit and d etect high-frequency carriers, IsoLoop Isolators do not rely on AC signals, and are inherently insensitive to AC magnetic fields. It is harder to disrupt an isolated AC signal with an external magnetic field than a DC signal. This enhances the IL6xxCMTI magnetic imm unity in switch-mode power control applications. Immunity to external magnetic fields can be enhanced by (1) optimal orientation of the device with respect to the field dir ection and (2) the use of bipolar coil inputs. 1. Orientation of the device with respect to the ex ternal field An applied field in the “H1” direction is the worst case for magnetic immunity. In this case, the external field is in the same direction as fields generated on-chip. An appl ied field in direction “H2” has considerably less effect and results in higher magnetic immunity. 2. Bipolar coil input Regardless of orientation, a bipolar input on the c oil improves magnetic immunity. The higher the coil cur rent, the higher the on-chip fields, and the higher the immunity to external fields. Method Approximate Immunity Immunity Description Field applied in H1 direction ±2 mT A DC current of 100 A flowing in a conductor 1 cm from the device could cause disturbance. Field applied in H2 direction ±7 mT A DC current of 140 A flowing in a conductor 1 cm from the device could cause disturbance. Field applied in any direction but with a bipolar input to the coil ±25 mT A DC current of 1250 A flowing in a conductor 1 cm from the device could cause disturbance.

Figure 13. A simple deglitch circuit. approximately 10 ns, and an inexpensive Schmitt-tri gger provides a digital output. Figure 14. Bipolar driver. maximum coil current, minimizes the required input current with a 3.3-volt supply, and maximizes immunity to external magnetic fields. Figure 15. Wide input voltage range with a constant current regulator. flexibility. In the circuit above, the maximum continuous input voltage will be limited by the CCR’s 208 mW total device dissipation.

0.1 F µ

Figure 16. A failsafe-HIGH alarm application circuit . used to activate an alarm or motor brake to shut down power-side devices safely if the controller power fails. Figure 17. Isolated gate-driver interface. convertor transformer. The resistor values shown ar e typical for a 3.3-volt supply.

Figure 18. Isolated half-bridge motor drive. The isolators can be used in conjunction with a hal f-bridge driver to create an isolated driver for motors or power-drive circuits. values shown are typical for a 3.3 volt input.

Figure 19. Simple Isolated H-Bridge. outputs to directly drive FETs, so separate drivers are not required . for other typical resistor values. case of a loss of controller-side power. allows time for the controller to start up before the high-side gate supplies are available.

Figure 20. Isolated high-power silicon-carbide H-bridge. for other typical resistor values. high-side gate supplies are available.

9 V 9 V

Figure 21. Shield01 H-bridge Arduino Shield (actual size).

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Package Drawings 8-pin MSOP (-1 suffix) 8-pin SOIC Package (-3 suffix) 0.114 (2.90) 0.114 (2.90) 0.016 (0.40) 0.005 (0.13) 0.009 (0.23) 0.027 (0.70) 0.010 (0.25) 0.002 (0.05) 0.043 (1.10) 0.032 (0.80) 0.006 (0.15) 0.016 (0.40) 0.189 (4.80) 0.197 (5.00) 0.122 (3.10) 0.122 (3.10) Dimensions in inches (mm); scale = approx. 5X 0.024 (0.60) 0.028 (0.70) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 0.188 (4.77) 0.197 (5.00) 0.012 (0.3) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 0.054 (1.37) 0.072 (1.83) 0.228 (5.8) 0.244 (6.2) 0.150 (3.8) 0.157 (4.0) 0.052 (1.32) 0.062 (1.57) 0.013 (0.3) 0.020 (0.5) 0.007 (0.2) 0.013 (0.3) 0.016 (0.4) 0.050 (1.3) NOM Dimensions in inches (mm); scale = approx. 5X

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Recommended Pad Layouts 8-pin MSOP Pad Layout 8-pin SOIC Pad Layout 0.025 (0.65) 0.227 (5.77) 0.017 (0.43)

8 PLCS

0.120 (3.05) Dimensions in inches (mm); scale = approx. 5X 0.275 (6.99) 0.050 (1.27) 0.020 (0.51) Dimensions in inches (mm); scale = approx. 5X 0.160 (4.05)

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Ordering Information and Valid Part Numbers Available Parts: Part Number Channels Default Output Package IL610CMTI -1E 1 HIGH MSOP8 IL610 FCMTI -1E LOW IL611CMTI -1E 2 HIGH IL611 FCMTI -1E LOW IL610CMTI -3E 1 HIGH SOIC8 Bulk Packaging Blank = Tube TR7 = 7'' Tape and Reel TR13 = 13'' Tape and Reel Package E = RoHS Compliant Package Type -1 = MSOP8 -3 = SOIC8 Grade Blank = Standard CMTI = Ultrahigh Transient Immunity Base Part Number 610 = Single Channel 611 = Dual Channel Product Family IL = Isolators CMTI 6xx F Default Output Blank = HIGH F = LOW

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com

Revision History

Added default-LOW versions (IL6xxFCMTI).

• Reversed coil polarity labeling for applicability to both default-HIGH and default-LOW versions.
• Changed magnetic immunity units from G to mT (SI units); clarified “Immunity Descriptions” (p. 13).
• Added constant current regulator and failsafe-HIGH alarm application circuits (Figs. 15 and 16, pp. 15 and 16).
• Added Arduino Shield demo board (p. 18). ISB-DS-001-IL6xxCMTI-RevF September 2023 Changes
• • •• Updated simple H-bridge application circuit with ILDC13.
• • •• Added more sophisticated H-bridge application circuits. ISB-DS-001-IL6xxCMTI-RevE October 2022 Changes Added VOE logic high and low input voltage specifications (p. 2).
• Upgraded to VDE 0884-17 (p. 3).
• Increased Working Voltage ratings based on latest VDE testing (p. 3). ISB-DS-001-IL6xxCMTI-RevD September 2020 Change More detailed Figure 15 (isolated H-bridge driver). ISB-DS-001-IL6xxCMTI-RevC March 2020 Change Dropped IL6xxCMTI-3 part type. ISB-DS-001-IL6xxCMTI-RevB February 2020 Changes Increased SOIC Working Voltage to 1000 VRMS (p. 3).
• Added drain-source resistance and more detailed output voltage specs.
• Separated 3.3 V and 5 V CMTI specification tables and separated one- and two-channel models.
• Added detailed block diagram.
• Dropped boost capacitor recommendation because it degrades CMTI.
• Added several performance graphs.
• Recommended two coil resistors and imbalanced resistors.
• VDE and UL approval. ISB-DS-001-IL6xxCMTI-RevA November 22, 2019 Changes Added thermal characteristics (p. 2).
• Increased supply voltage range from 6 V to 6.6 V.
• Additional application circuits.
• Initial release. ISB-DS-001-IL6xxCMTI- PRELIM2 November 1, 2019 Changes Updated CMTI specs.
• Additional application circuits. ISB-DS-001-IL6xxCMTI-PRELIM September 2019 Change Preliminary release.

NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com Datasheet Limitations The information and data provided in datasheets shall define the specification of the product as agreed between NVE and its customer, unless NVE and customer have explicitly agreed otherwise in writing. All specifications are based on NVE test protocols. In no event however, shall an agreement be valid in which the NVE product is deemed to offer functions and qualities beyond those described in the datasheet. Limited Warranty and Liability Information in this document is believed to be accurate and reliable. However, NVE does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344 (952) 829 -9217 www.nve.com YouTube.com/NveCorpor ation iso -apps@nve.com An ISO 9001 Certified Company NVE Corporation

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Eden Prairie, MN 55344-3617 USA Telephone: (952) 829-9217 www.nve.com e-mail: iso-info@nve.com ©NVE Corporation All rights are reserved. Reproduction in whole or i n part is prohibited without the prior written consent of the copyright owner. ISB-DS-001-IL6xxCMTI February 2025