IL600 NVE | Alldatasheet
Document overview
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- PDF pages: 22
Technical content
Features
- Up to 100 Mbps data rate
- Flexible inputs with very wide input voltage range
- 5 mA input current
- Failsafe output (logic high output for zero coil cu rrent)
- No carrier or clock for low EMI emissions and susceptibility
- Low power dissipation
- 3 V to 5 V power supplies
- 44000 year barrier life
- −40 °C to 85 °C temperature range
- 2.5 kV isolation
- IEC 60747-17 (VDE 0884-17):2021-10; UL 1577
- 8-pin MSOP, SOIC, and PDIP packages
- 0.15", 0.3", or True 8™ mm SOIC packages
Applications
- CAN Bus / Device Net
- Differential line receiver
- Optocoupler replacement
- SPI interface
- RS-485, RS-422, or RS-232
- Digital Fieldbus
- Space-critical multi-channel applications
Description
The IL600 Series are passive input digital signal isolators with CMOS outputs. They have a similar interface bu t better performance and higher package density than optocou plers. The devices are manufactured with NVE’s patented* IsoLoop ® spintronic Giant Magnetoresistive (GMR) technology for small size, high speed, and low powe r. A unique ceramic/polymer composite barrier provides excellent isolation and virtually unlimited barrier life. A resistor sets the input current; a capacitor in parallel with the current-limit resistor provides improved dynami c performance. These versatile components simplify inventory requi rements by replacing a variety of optocouplers, functioning over a wide range of data rates, edge speeds, and power su pply levels. The devices are available in various packag es, as well as bare die.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Absolute Maximum Ratings (1) Parameters Symbol Min. Typ. Max. Units Test Conditions Storage Temperature TS −55 (2) 150 °C Junction Temperature TJ −55 150 °C Ambient Operating Temperature TA −40 (3) 85 °C Supply Voltage VDD −0.5 7 V DC Input Current IIN −25 25 mA AC Input Current (Single-Ended Input) IIN −35 35 mA AC Input Current ( Differential Input) IIN −75 75 mA Output Voltage VO −0.5 VDD +1.5 V Maximum Output Current IO −10 10 mA ESD (output enable CMOS in put s) 2 kV HBM Recommended Operating Conditions Parameters Symbol Min. Typ. Max. Units Test Conditions Ambient Operating Temperature TA −40 (3) 85 °C Junction Temperature TJ −40 100 °C Supply Voltage VDD 3.0 5.5 V Output Current IOUT −4 4 mA Common Mode Input Voltage VCM 400 VRMS Note 1: Operating at absolute maximum ratings will not dam age the device. Parametric performance is not guara nteed at absolute maximum ratings. Note 2: -55 oC applies to all except IL611-1E. -20 oC applies to IL611-1E Note 3: -40 oC applies to all except IL611-1E. -20 oC applies to IL611-1E
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Safety and Approvals IEC 60747-17 (VDE 0884-17):2021-10 (Basic Isolation; VDE File Number 5016933-4880-0001):
- Isolation voltage (VISO ): 2500 VRMS
- Transient overvoltage (V IOTM ): 4000 VPK
- Surge rating 4000 V
- Each part tested at 1590 VPK for 1 second, 5 pC partial discharge limit
- Samples tested at 4000 VPK for 60 sec.; then 1358 VPK for 10 sec. with 5 pC partial discharge limit
- Working Voltage (V IORM ; pollution degree 2): Package Part No. Suffix Working Voltage MSOP8 -1 800 V RMS SOIC8 -3 700 V RMS PDI P8 -2 900 V RMS Narrow -body SOIC16 -3 700 V RMS Wide -body SOIC16/True 8™ None 600 V RMS Safety-Limiting Values Symbol Value Units Safety rating ambient temperature TS 180 °C Safety rating power (180°C) PS 270 mW Supply current safety rating (total of supplie s) IS 54 mA UL 1577 (Component Recognition Program File Number E207481)
- 2500 V rating for all types other than MSOP.
- Each part other than MSOP tested at 3000 V RMS (4240 VPK ) for 1 second; each lot sample tested at2500 VRMS (3530 VPK ) for 1 minute.
- MSOP rating 1000 V; tested at 1200 VRMS (1768 VPK ) for 1 second; each lot sample tested at 1500 VRMS (2121 VPK ) for 1 minute. Soldering Profile Per JEDEC J-STD-020C; MSL 1 Electrostatic Discharge Sensitivity This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance degradation to complete failure.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com IL610 Pin Connections
1 NC No internal connection
2 IN+ Coil connection
3 IN − Coil connection
4 NC No internal connection
5 GND Ground return for V DD
6 OUT Data out
Output enable. Internally held low with 100 k Ω
8 VDD Supply Voltage
1 IN 1+ Channel 1 coil connection
2 IN 1− Channel 1 coil connection
3 IN 2+ Channel 2 coil connection
4 IN 2− Channel 2 coil connection
6 OUT 2 Data out, channel 2
7 OUT 1 Data out, channel 1
1 IN 1 Data in, channel 1
2 VDD1 Supply Voltage 1
3 OUT 2 Data out, channel 2
4 GND 1 Ground return for V DD1
5 GND 2 Ground return for V DD2
6 IN 2 Data in, channel 2
7 VDD2 Su pply Voltage 2
8 OUT 1 Data out, channel 1
2 NC No connection
(internally connected to pin 8)
3 IN 1− Channel 1 coil connection
4 IN 2+ Channel 2 coil connection
5 IN 2− Channel 2 coil connection
6 IN 3+ Channel 3 coil connection
7 IN 3− Channel 3 coil connection
8 NC No connection
(internally connected to pin 2)
9 GND Ground return for V DD
(internally connected to pin 15)
10 OUT 3 Data out, channel 3
11 NC No connection
12 V DD Supply Voltage. Pin 12 and pin 16 must be connected externally
13 OUT 2 Data out, channel 2
14 OUT 1 Data out, channel 1
15 GND Ground return for V DD
(internally connected to pin 9) 16 V DD Supply Voltage. Pin 12 and pin 16 must be connected externally IL613 Note: Pins 12 and 16 must be connected externally. NC V DD IN+ V OE IN- OUT NC GND IN1+ V DD IN1- OUT 1 IN2+ OUT2 IN2- GND IN1+ V DD NC GND* IN1- OUT1 IN2+ OUT2 IN2- VDD IN3+ IN3- NC OUT3 NC GND IN1 OUT1 VDD1 VDD2 OUT2 IN2 GND1 GND2
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com IL614 Pin Connections
1 VDD1 Supply Voltage 1
2 GND 1
(internally connected to pin 8)
3 OUT 1 Data out, channel 1
4 VOE Channel 1 data output enable. Internally held low with 100 kΩ
5 IN 2 Data in, channel 2
6 V coil
channel 2 and channel 3 coils
7 IN 3 Data in, channel 3
8 GND 1
(internally connected to pin 2)
9 GND 2
(internally connected to pin 15)
10 NC No Connection
11 OUT 3 Data out, channel 3
12 VDD2 Supply Voltage 2
14 IN 1+ Coil connection
15 GND 2
(internally connected to pin 9)
16 IN 1− Coil connection
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Operating Specifications Input Specifications (V DD = 3 V − 5.5 V; T = −40°C (2) − 85°C unless otherwise stated) Parameters Symbol Min. Typ. Max. Units Test Conditions Coil Input Resistance R COIL 47 85 112 Ω T = 25°C 31 85 128 Ω T = −40°C − 85°C Coil Resistance Temperature Coefficient TC R COIL 0.2 0.25 Ω/°C Coil Inductance LCOIL 9 nH DC Input Threshold (5 V) IINH-DC 0.5 1 mA Test Circuit 1; V DD = 4.5 V − 5.5 V IINL-DC 3.5 5 mA DC Input Threshold (3 V) IINH-DC 0.3 0.5 mA Test Circuit 1; V DD = 3V − 3.6 V; no boost cap IINL-DC 5 8 mA Dynamic Input Threshold (3 V) IINH-BOOST 0.5 1 mA VDD = 3V − 3.6 V; tIR = tIF = 3 ns; CBOOST = 16 pF IINL-BOOST 3.5 5 mA Differential Input Threshold IINH-DIFF 0.5 1 mA Test Circuit 2; V DD = 3V − 5.5 V; input current reverses; boost cap not required IINL-DIFF 3.5 5 mA Failsafe Input Current (1) (5 V) IFS-HIGH −25 0.5 mA Test Circuit 1; V DD = 4.5 V − 5.5 V IFS-LOW 5 25 mA Failsafe Input Current (1) (3 V) IFS-HIGH −25 0.3 mA Test Circuit 1; V DD = 3 V − 3.6 V IFS-LOW 8 25 mA VOE Logic High Input Voltage VIH 2.4 VDD 1 V VOE Logic Low Input Voltage VIL 0 0.8 V Input Signal Rise and Fall Times tIR , t IF 1 μs Common Mode Tra nsient Immunity |CM H|,|CM L| 15 20 kV/ μs VT = 300 V peak Notes: 1. Failsafe Operation is defined as the guaranteed output state which will be achieved if the DC input current falls between the input levels specified (see Test Circuit 1 for details). Note if Failsafe to Logic Low is required, the DC current supplied to the coil must be at least 8 mA using 3.3 V supplies versus 5 mA for 5 V supplies. 2. -20 oC for IL611-1E Test Circuit 1 (Single-Ended) Test Circuit 2 (Diffe rential) +V VDD GND 1 GND 2 15 pF 10 nF Rlimit Cboost GND 1 1 2 IL610 +V VDD GND 1 GND 2 15 pF 10 nF IL610 Rlimit
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Parameters Symbol Min. Typ. Max. Units Test Conditions Quiescent Supply Current IL610 IDD 2 3 mA V DD = 5 V, I IN = 0 IL611 IDD 4 6 IL612 IDD1 2 3 IL612 IDD2 2 3 IL613 IDD 6 9 IL614 IDD1 2 3 IL614 IDD2 4 6 Logic High Output Voltage VOH 4.9 5 V VDD = 5 V, I O = 20 μA 4.0 4.8 V VDD = 5 V, I O = 4 mA Logic Low Output Voltage V OL 0 0.1 V VDD = 5 V, I O = −20 μA 0.2 0.8 V VDD = 5 V, I O = −4 mA Logic Output Drive Cu rrent |I O| 7 10 mA 5 V Switching Specifications (V DD = 4.5 V − 5.5 V; T = −40°C (5) − 85°C unless otherwise stated) Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 100 Mbps Test Circuit 1; tIR = tIF = 3 ns; CBOOST = 16 pF Minimum Pulse Width (1) PW 10 ns Propagation Delay Input to Output (High -to -Low) tPHL 8 15 ns Propagation Delay Input to Output (Low to High) tPLH 8 15 ns Average Propagation Delay Drift tPLH 10 ps/°C Pulse Width Distortion |t PHL −t PLH |(2) PWD 3 5 ns Pulse Jitter (3) tJ 100 ps Propagation Delay Skew (4) tPSK −2 2 ns Output Rise Time (10 – 90%) tR 2 4 ns Output Fall Time (10 – 90%) tF 2 4 ns Notes: 1. Minimum Pulse Width is the shortest pulse width at which the specified PWD is guaranteed. 2. PWD is defined as | t PHL − tPLH |. 3. 66,535-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time. 4. tPSK is equal to the magnitude of the worst case difference in t PHL and/or t PLH that will be seen between units at 25°C. 5. -20 oC for IL611-1E
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com 3.3 V Electrical Specifications (V DD = 3 V − 3.6 V; T = −40°C (4) − 85°C unless otherwise stated) Parameters Symbol Min. Typ. Max. Units Test Conditions Quiescent Supply Current IL610 IDD 1.3 2 mA V DD = 3.3 V, I IN = 0 IL611 IDD 2.6 4 IL612 IDD1 1.3 2 IL612 IDD2 1.3 2 IL613 IDD 4 6 IL614 IDD1 1.3 2 IL614 IDD2 2.6 4 Logic High Output Voltage VOH 3.2 3.3 V VDD = 3.3 V, I O = 20 μA 3.0 3.1 V VDD = 3.3 V, I O = 4 mA Logic Low Output Voltage V OL 0 0.1 V VDD = 3.3 V, I O = −20 μA 0.2 0.8 V VDD = 3.3 V, I O = −4 mA Logic Output Drive Current |I O| 7 10 mA 3.3 V Switching Specifications (V DD = 3 V − 3.6 V; T = −40°C (4) − 85°C unless otherwise stated) Data Rate 100 Mbps Test Circuit 1; tIR = tIF = 3 ns; CBOOST = 16 pF Minimum Pulse Width (1) PW 10 ns Propagation Delay Input to Output (High to Low) tPHL 12 18 ns Propagation Delay Input to Output (Low to High) tPLH 12 18 ns Average Propagation Delay Drift tPLH 10 ps/° C Pulse Width Distortion |t PHL −t PLH | (2) PWD 3 5 ns Propagation Delay Skew (3) tPSK −2 2 ns Output Rise Time (10 – 90%) tR 3 5 ns Output Fall Time (10 – 90%) tF 3 5 ns Notes: 1. The Minimum Pulse Width is the shortest pulse width at which the specified PWD is guaranteed. 2. PWD is defined as | t PHL − tPLH |. 3. tPSK is equal to the magnitude of the worst case difference in t PHL and/or t PLH that will be seen between units at 25°C. 4. -20 oC for IL611-1E
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Insulation Specifications Parameters Symbol Min. Typ. Max. Units Test Conditions Cr eepage Distance (external) MSOP 3.01 mm 0.15'' SOIC 4.03 mm 0.3'' SOIC 8.03 8.3 mm Per IEC 60601 PDIP 7.08 mm Total Barrier Thickness (internal) 0.012 0.013 mm Leakage Current 0.2 μA 240 V RMS , 60 Hz Barrier Resistance RIO >10 14 500 V Barrier Capacitance CIO 7 Ω || pF f = 1 MHz Comparative Tracking Index CTI ≥175 V Per IEC 60112 High Voltage Endurance (Maximum Barrier Voltage for Indefinite Life) AC DC VIO 1000 1500 VRMS VDC At maximum operating temperature Barrier Life 44000 Years 100°C, 1000 V RMS , 60% CL activation energy Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions Junction–Ambient Thermal Resistance MSOP8 0.15" SOIC8 0.15" SOIC16 0.3" SOIC16 PDIP8 θ JA 184 134 114 °C/W Double-sided PCB in free air Junction–Case (Top) Thermal Resistance MSOP8 0.15" SOIC8 0.15" SOIC16 0.3" SOIC16 PDIP8 θ JC Junction–Ambient Thermal Resistance 0.3" SOIC θ JA 46 2s2p PCB in free air per JESD51 Junction–Case (Top) Thermal Resistance θ JC 9 Power Dissipation MSOP8 0.15" SOIC8 0.15" SOIC16 0.3" SOIC16 PDIP8 PD 500 675 675 1500 800 mW
output. As shown in Figure 1, output logic high is the zero input current state. The device switches to logic low if current flows f rom (In−) to (In+). input voltages because there are no semiconductor i nput structures. external resistor for 5 mA coil current. used for increased external field immunity or impro ved PWD. the absolute maximum current. structure is required for a differential signal. directly for a fraction of the cost of an isolated RS-485 node (see Illustrative Applications). Figure 1. Typical IL600-Series Transfer Function Figure 2. Limiting Resistor Calculation
3.3 V 510 Ω
5 V 820 Ω
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Dynamic Power Consumption Power consumption is proportional to duty cycle, no t data rate. The use of NRZ coding minimizes power dissipation since no additional power is consumed when the output is in the high state. In differential mode, where the logic high condition may still require a current to be forced through the coil, po wer consumption will be higher than a typical NRZ single ended configuration. Power Supply Decoupling 0.1 µF typical (0.047 µF minimum) capacitors are re commended to decouple the power supplies. The capac itors should be placed as close as possible to the appropriate V DD pin. Maintaining Creepage Creepage distances are often critical in isolated circuits. In addition to meeting JEDEC standards, NV E isolator packages have unique creepage specifications. Standard pad librar ies often extend under the package, compromising cr eepage and clearance. Similarly, ground planes, if used, should be spaced to avoid compromising clearance. Package drawings and recommended pad layouts are included in this datasheet. Electromagnetic Compatibility and Magnetic Field Immunity Because IL600-Series Isolators are completely static, they have the lowest emitted noise of any non-op tical isolators. IsoLoop Isolators operate by imposing a magnetic fi eld on a GMR sensor, which translates the change in field into a change in logic state. A magnetic shield and a Wheatstone Bridge configuration provide good immunity to external magnetic fields. Immunity to external magnetic fields can be enhance d by proper orientation of the device with respect to the field direction, the use of differential signaling, and boost capacitors. 1. Orientation of the device with respect to the field direction An applied field in the “H1” direction is the worst case for magnetic immunity. In this case the external field is in the same direction as the applied internal field. In one direction it will tend to help switching; in the other it will hinder switching. This can cause unpredictable operation. An applied field in direction “H2” has considerably less effect and results in higher magnetic immunity. NC V DD IN+ V OE IN- OUT NC GND 2. Differential Signaling and Boost Capacitors Regardless of orientation, driving the coil differe ntially improves magnetic immunity. This is because the logic high state is driven by an applied field instead of zero field, as is th e case with single-ended operation. The higher the coil current, the higher the internal field, and the higher the immunity to external fields. Optimal magnetic immunity is achieved by adding the boost capacitor. Method Approximate Immunity Immunity Description Field applied in H1 direction ±20 Gauss A DC current of 16 A flowing in a conductor 1 cm from the device could cause disturbance. Field applied in H2 direction ±70 Gauss A DC current of 56 A flowing in a conductor 1 cm from the device could cause disturbance. Field applied in any direction but with boost capacitor (16 pF) in circuit ±250 Gauss A DC current of 200 A flowing in a conductor 1 cm from the device could cause disturbance. Data Rate and Magnetic Field Immunity It is easier to disrupt an isolated DC signal with an external magnetic field than it is to disrupt an isolated AC signal. Similarly, a DC magnetic field will have a greater effect on the device than an AC magnetic field of the same effec tive magnitude. For example, signals with pulses longer than 100 μs are more susceptible to magnetic fields than shorter pulse widths.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Illustrative Applications Isolated RS-485 and RS-422 Receivers Using IL610s Number of Nodes Current Limit Resistors ( ΩΩ ΩΩ )
1 None
IL610 components can be used as simple isolated RS-485 or RS-422 receivers, terminating signals at the IL610 for a fraction of the cost of an isolated node. Cabling is simplified by eliminating the need to power the input side of the receiving board. No current-limiting resistor is needed for a single receiver because it will draw less current than the driver maximum. Current limiting resistors allow at least eight nodes without exceeding the maximum load of the transceiver. Placement of the c urrent-limiting resistors on both lines provides better dynamic signal balance. There is ge nerally no need for line termination resistors below data rates of approximately 10 Mbps because the IL610 coil resistance of approximately 85 Ω is close to the characteristic impedance of most cables. The circuit is intrinsically open-circuit failsafe because the IL6 10 is guaranteed to switch to the high state when the coil input current is less than 0.5 mA. GND 2 VDD B ISL8485 D 47nF VDD1 GND 1 IL610 R RE A 47nF
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com SJA1000 PCA82C250 /K31 /K32 /K33 /K34 /K35 /K36 /K37 /K38 /K52/K73 /K43/K41/K4E/K48 /K43/K41/K4E/K4C /K56/K72/K65/K66 /K54/K58/K44 /K47/K4E/K44 /K56/K63/K63 /K52/K58/K44 /K31 /K32 /K33 /K34 /K35 /K36 /K31/K34 /K31/K33 /K31/K32 /K38 /K31/K35 /K31/K38 /K31/K39 /K32/K30 /K32/K31 /K32/K32 /K56 /K53/K53/K33 /K56 /K53/K53/K32 /K56 /K53/K53/K31 /K56 /K44/K44/K33 /K56 /K44/K44/K32 /K56 /K44/K44/K31 /K54 /K58/K30 /K54 /K58/K31 /K52/K58/K31 /K52/K58/K30 /K56 /K44/K44/K32 /K56 /K44/K44/K31 /K47/K4E/K44 /K32 /K47/K4E/K44 /K31 /K43 /K36 /K43 /K35 /K43 /K34 /K43 /K33 /K43 /K32 /K43 /K31 /K52/K73 /K31/K4B /K31/K4B /K43 /K62/K6F/K6F/K73/K74 /K43 /K62/K6F/K6F/K73/K74 /K37 /K38 /K34 /K4E/K6F/K74/K65/K73/K3A /K20/K20/K20/K43 /K62/K6F/K6F/K73/K74 /K20/K69/K73/K20/K31/K36/K20/K70/K46/K20/K63/K65/K72/K61/K6D/K69/K63 /K56 /K44/K44/K31 /K56 /K44/K44/K32 IL612 /K41/K6C/K6C/K20/K6F/K74/K68/K65/K72/K20/K63/K61/K70/K61/K63/K69/K74/K6F/K72/K73/K20/K61/K72/K65/K20/K34/K37/K20/K6E/K46/K20/K63/K65/K72/K61/K6D/K69/K63/K20/K20 Isolated CAN Bus Low pulse width distortion is critical for CAN bus, and IL600 Isolators are specified for just 3 ns typical pulse width distortion. Their fail-safe output (logic high output for zero coil current) ensures proper power-on. The speed of IL600 isolators easily supports the maximum CAN bus transfer speed of 1 Mb ps.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com GND2GND1 VDD2VDD1 A B 390R 390R 220R ISL8487E R RE DE D C31 8 9 D DE R RE Cboost Cboost Cboost RE IL614 Notes: Cboost is 16 pF All other capacitors are 47 nF ceramic Isolated RS-485 – Fractional Load The unique IL614 three-channel isolator can be used as part of a multi-chip design with a variety of non-isolated transceivers. The IL614 provides 2.5 kV RMS isolation (1 minute) and 20 kV/µs transient immuni ty. The IL614-3 is in a narrow-body (0.15 inch-wide) package when board space is critic al.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com IL610 LM309H IR2102 4 5 +5 V 10-20 V 600 V max. LIN Hi-Drive Lo-Drive HIN HO LO V S VCC VB COM GND1 GND2 Cboost Cboost CAPP- + 5 boost Notes: Cboost is 16 pF CAPP is application specific All other capacitors are 47 nF ceramic IL610 T o Load Single-Phase Power Control The fail-safe output (logic high output for zero co il current) of IL600 Isolators ensures power FETs will be off on power-up. The IL600 inputs can be configured for inverting or non-inverting operation (see Applications Information). IL610 GND VDD2 GND CBOOST 47 nF - Vo 16 pF Rx (+10V) _ Isolated RS-232 Receiver Using IL610 An IL610 can be used as a simple isolated RS-232 re ceiver. Most RS-232 nodes have at least 5 mA drive capability to switch the IL610. Cabling is simplified by eliminating the need to power the input side of the receiving board. A similar circuit can be used for RS-422/RS-485, LVDS, or other differential networks. The IL610-1 is a unique MSOP isolator when board space is critical.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Package Drawings 8-pin MSOP (-1 suffix) 0.114 (2.90) 0.114 (2.90) 0.016 (0.40) 0.005 (0.13) 0.009 (0.23) 0.027 (0.70) 0.010 (0.25) 0.002 (0.05) 0.043 (1.10) 0.032 (0.80) 0.006 (0.15) 0.016 (0.40) 0.189 (4.80) 0.197 (5.00) 0.122 (3.10) 0.122 (3.10) Dimensions in inches (mm); scale = approx. 5X 0.024 (0.60) 0.028 (0.70) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 8-pin SOIC Package (-3 suffix) 0.188 (4.77) 0.197 (5.00) 0.012 (0.3) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 0.054 (1.37) 0.072 (1.83) 0.228 (5.8) 0.244 (6.2) 0.150 (3.8) 0.157 (4.0) 0.052 (1.32) 0.062 (1.57) 0.013 (0.3) 0.020 (0.5) 0.007 (0.2) 0.013 (0.3) 0.016 (0.4) 0.050 (1.3) NOM Dimensions in inches (mm); scale = approx. 5X 8-pin PDIP (-2 suffix) 0.28 (7.1) 0.33 (8.4) 0.30 (7.6) 0.38 (9.7) 0.008 (0.2) 0.015 (0.4) Dimensions in inches (mm); scale = approx. 2.5X 0.345 (8.76) 0.40 (10.2) 0.27 (6.9) 0.24 (6.1) 0.055 (1.40) 0.065 (1.65) 0.030 (0.76) 0.045 (1.14) 0.014 (0.36) 0.045 (1.14) 0.070 (1.78) 0.09 (2.3) 0.11 (2.8) 0.015 (0.38) 0.040 (1.02) 0.13 (3.30) 0.17 (4.32) 0.023 (0.58) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com 0.15" 16 -pin SOIC Package (-3 suffix) 0.386□(9.8) 0.394□(10.0) 0.049□(1.24) 0.051□(1.30) 0.007□(0.2) 0.013□(0.3) Pin□1□identified by either□an indent□or□a marked dot 0.004□(0.1) 0.012□(0.3) 0.016□(0.4) 0.050□(1.3) NOTE: Pin□spacing□is□a□BASIC dimension;□tolerances do□not□accumulate 0.054□(1.4) 0.072□(1.8) 0.228□(5.8) 0.244□(6.2) 0.150□(3.81) 0.157□(3.99) 0.054□(1.37) 0.062□(1.58) 0.013□(0.3) 0.020□(0.5) NOM Dimensions□in□inches□(mm);□scale□=□approx.□5X 0.3" 16 -pin SOIC Package (no suffix) 0.049 (1.24) 0.051 (1.30) 0.017 (0.43)* 0.022 (0.56) 0.292 (7.42)* 0.299 (7.59) 0.007 (0.18)* 0.010 (0.25) 0.260 (6.60)* 0.280 (7.11) 0.033 (0.85)* 0.043 (1.10) 0.007 (0.2) 0.013 (0.3) Pin 1 identified by either an indent or a marked dot 0.08 (2.0) 0.10 (2.5) 0.397 (10.08) 0.413 (10.49) 0.394 (10.00) 0.419 (10.64) 0.092 (2.34) 0.105 (2.67) 0.004 (0.1) 0.012 (0.3) 0.016 (0.4) 0.050 (1.3) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 0.013 (0.3) 0.020 (0.5) Dimensions in inches (mm); scale = approx. 5X *Specified for True 8™ package to guarantee 8 mm creepage per IEC 60601.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Ordering Information and Valid Part Numbers Bulk Packaging Blank = Tube TR7 = 7'' Tape and Reel TR13 = 13'' Tape and Reel Package E = RoHS Compliant Package Type Blank = 0.3" SOIC -1 = MSOP -2 = PDIP -3 = 0.15'' SOIC -5 = Bare die Base Part Number 610 = Single Channel 611 = 2 Drive Channels 612 = 1 Drive Channel,
1 Receive Channel
613 = 3 Drive Channels 614 = 2 Drive Channels, IL = Isolators IL610 Valid Part Numbers IL610-1E IL610-2E IL610-3E IL610-5 IL611 Valid Part Numbers IL611-1E IL611-2E IL611-3E IL612 Valid Part Numbers IL612-2E IL612-3E IL613 Valid Part Numbers IL613E IL613-3E IL614 Valid Part Numbers IL614E IL614-3E All MSOP and SOIC part types are available on tape and reel. IL 610 - 1 E TR13 RoHS COMPLIANT
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com
Revision History
Upgrade to VDE 0884-17 (p. 3).
- Increased Working Voltage ratings based on latest VDE testing (p. 3).
- Added VOE logic high and low input voltage specifications (p. 6).
- Added thermal characteristics (p. 9). ISB-DS-001-IL600-AC Changes Corrected 8-pin SOIC package outline dimensions.
- Changed low temperature specification for IL611-1E to −20°C. Changes IEC 60747-5-5 (VDE 0884) certification.
- Upgraded from MSL 2 to MSL 1.
- Rearranged input threshold specifications so maximum is more than minimum. ISB-DS-001-IL600-AB ISB-DS-001-IL600-AA Changes
- Added VDE 0884 pending.
- Updated package drawings.
- Added recommended solder pad layouts.
- Clarified circuit polarities. ISB-DS-001-IL600-Z Changes Detailed isolation and barrier specifications.
- Cosmetic changes. ISB-DS-001-IL600-Y Changes Clarified Test Circuit 2 differential operation diagram (p.5). ISB-DS-001-IL600-X Changes Separated and clarified Input Specifications.
- Added minimum/maximum coil resistance specifications.
- Merged and simplified “Operation” and “Applications ” sections. ISB-DS-001-IL600-W Changes Update terms and conditions. ISB-DS-001-IL600-V Changes Additional changes to pin spacing specification on MSOP drawing. ISB-DS-001-IL600-U Changes Changed pin spacing specification on MSOP drawing. ISB-DS-001-IL600-T Changes
- Added typical jitter specification at 5V. ISB-DS-001-IL600-S Changes
- P. 2—Deleted MSOP IEC61010 approval. ISB-DS-001-IL600-R Changes Added EMC details.
NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com Datasheet Limitations The information and data provided in datasheets shall define the specification of the product as agreed between NVE and its customer, unless NVE and customer have explicitly agreed otherwise in writing. All specifications are based on NVE test protocols. In no event however, shall an agreement be valid in which the NVE product is deemed to offer functions and qualities beyond those described in the datasheet. Limited Warranty and Liability Information in this document is believed to be accurate and reliable. However, NVE does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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NVE Corporation 11409 Valley View Road, E den Prairie, MN 55344 -3617 (952) 829 -9217 www.nve.c om YouTube.com/NveCorporatio n iso-apps@nve.com An ISO 9001 Certified Company NVE Corporation
11409 Valley View Road
Eden Prairie, MN 55344-3617 USA Telephone: (952) 829-9217 www.nve.com e-mail: iso-info@nve.com ©NVE Corporation All rights are reserved. Reproduction in whole or i n part is prohibited without the prior written consent of the copyright owner. ISB-DS-001-IL600-AD October 2022