IL3185 NVE | Alldatasheet

Document overview

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  • PDF pages: 19

Technical content

Features

  • 5 Mbps data rate
  • 3 V to 5 V power supplies
  • Supports up to 32 nodes
  • 15 kV bus ESD protection
  • 20 kV/µs typical common mode rejection
  • No carrier or clock for low EMI emissions and susceptibility
  • −40 °C to +85 °C temperature range
  • Thermal shutdown protection
  • 2500 V RMS isolation
  • IEC 60747-17 (VDE 0884-17):2021-10; UL 1577
  • 0.15" or 0.3" True 8™ mm 16-pin SOIC packages

Applications

  • P.O.S. systems
  • Security networks
  • Building environmental controls
  • Industrial control networks
  • Gaming systems
  • Factory automation

Description

The IL3185 and IL3122 are galvanically isolated, di fferential bus transceivers designed for bidirectional data communication over balanced transmission lines. The devices use NVE’s patented* IsoLoop spintronic Gian t Magnetoresistance (GMR) technology. The IL3185 deli vers at least 1.5 V into a 54 Ω load, and the IL3122 at least 2 V into a 100 Ω load for excellent data integrity over long cables. These devices are also compatible with 3 V input supplies, allowing interface to standard microcontrollers without additional level shifting. Both the IL3185 and IL3122 have current limiting an d thermal shutdown features to protect against output short circuits and bus contentions that may cause excessive power dissipation. The receivers also incorporate a “fail -safe if open” design, ensuring a logic high on R if the bus lines are disconnected or “floating.” Selection Table Model Full/Half Duplex No. of Devices Allowed on Bus Data Rate Mbps Fail-Safe IL3185 half 32 5 yes IL3122 full 32 5 yes R RE A B Z R RE Y IL3122 IL3185 A B VCOIL2 VCOIL1 VCOIL1 VCOIL2 DE D DE D

Operating at absolute maximum ratings will not damage the device. However, extended periods of operation at the absolute maximum ratings may affect performance and reliability. Parameters Symbol Min. Typ. Max. Units Test Conditions Storage Temperature TS −55 150 °C Junction Temperature TJ −55 150 °C Voltage Range at A or B Bus Pins −7 12 V Supply Voltage (1) VDD 1, VDD 2 −0.5 7 V Digital Input Voltage −0.5 VDD +0.5 V Digital Output Voltage −0.5 VDD +1 V ESD Protection ±15 kV Input Current IIN −25 +25 mA ESD (all bus nodes) 15 kV HBM Note 1. All voltage values are with respect to network ground except differential I/O bus voltages. Recommended Operating Conditions Parameters Symbol Min. Typ. Max. Units Test Conditions Supply Voltage VDD 1 VDD 2 3.0 4.5 5.5 5.5 V Ambient Operating Temperature TA −40 85 °C Junction Temperature TJ −40 100 °C Input Voltage at any Bus Terminal (separately or common mode) VI VIC 12 −7 V Input Threshold for Output Logic High IINH 1.5 0.8 mA Input Threshold for Output Logic Low IINL 5 3.5 mA Differential Input Voltage VID +12/ −7 V High -Level Output Current (Driver) IOH −60 60 mA High-Level Digital Output Current (Receiver) IOH −8 8 mA Low -Level Output Current (Driver) IOL −60 60 mA Low-Level Digital Output Current (Receiver) IOL −8 8 mA Digital Input Signal Rise, Fall Times tIR ,t IF 1 µs

IEC 60747-17 (VDE 0884-17):2021-10 (Basic Isolation; VDE File Number 5016933-4880-0001):

  • Isolation voltage (V ISO ): 2500 VRMS
  • Transient overvoltage (V IOTM ): 4000 VPK
  • Surge rating 4000 V
  • Each part tested at 1590 VPK for 1 second, 5 pC partial discharge limit
  • Samples tested at 4000 VPK for 60 sec.; then 1358 VPK for 10 sec. with 5 pC partial discharge limit
  • Working Voltage (V IORM ; pollution degree 2): Package Part No. Suffix Working Voltage Narrow -body SOIC16 -3 700 V RMS Wide -body SOIC16/True 8 ™ None 600 V RMS Safety-Limiting Values Symbol Value Units Safety rating ambient temperature TS 180 °C Safety rating power (180 °C) PS 270 mW Supply current safety rating (total of supplies) IS 54 mA UL 1577 (Component Recognition Program File Number E207481)
  • 2500 V rating
  • Each part tested at 3000 V RMS (4243 VPK ) for 1 second
  • Each lot sample tested at 2500 VRMS (3536 VPK ) for 1 minute Soldering Profile Per JEDEC J-STD-020C, MSL 1 Electrostatic Discharge Sensitivity This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance degradation to complete failure.

IL3185-3 Pin Connections (0.15" SOIC Package)

1 VDD1 Input power supply

2 GND 1 Ground return for V DD1

3 R Output data from bus

(if RE is high, R is high impedance)

5 DE Drive enable

6 VCOIL1 Coils for DE and D (connect to V DD1 )

7 D Data input to bus

8 DNC Do not connect

9 GND 2

(internally connected to pin 15 )

10 NC No internal connection

11 VDD2 Output power supply

12 A Non -inverting bus line

13 B Inverting bus line

14 NC No internal connection

15 GND 2

(internally connected to pin 9 )

16 VCOIL2 Coil for R

IL3122-3 Pin Connections (0.15" SOIC Package) (if RE is high, R is high impedance) (internally connected to pin 15 )

10 Y Non -inverting driver bus line

12 Z Inverting driver bus line

13 B Inverting receiver bus line

14 A Non -inverting receiver bus line

(internally connected to pin 9 ) D V DD2 NC NC GND 2 VDD1 VCOIL2 GND 1 VCOIL1 GND 2 R A RE B DE Z D VDD2 Y NC GND 2DNC DNC

IL3185 Pin Connections (0.3" SOIC Package) (if RE is high, R is high impedance)

8 GND 1

Internally connected to pin 2 for 0.3" package; no internal connection on 0.15" IL3185 -3 (internally connected to pin 15 ) (internally connected to pin 9 ) IL3122 Pin Connections (0.3" SOIC Package) (if RE is high, R is high impedance) Internally connected to pin 2 for 0.3" package; no internal connection on 0.15" IL3122 -3 (internally connected to pin 15 ) (internally connected to pin 9 )

Parameters Symbol Min. Typ. Max. Units Test Conditions Coil Input Resistance RCOIL 47 85 112 Ω T = 25°C Coil Input Resistance RCOIL 31 85 128 Ω T = −40°C − 85°C Coil Resistance Temperature Coefficient TC R COIL 0.2 0.25 Ω/°C Coil Inductance LCOIL 9 nH High Level Input Current IINH 0.5 1 mA tIR = tIF = 3 ns; CBOOST = 16 pF Low Level Input Current IINL 3.5 5 mA Output voltage VDD V IO = 0 Differential Output Voltage |V OD1 | VDD V IO = 0 Differential Output Voltage |V OD2 | 2 3 V RL = 100 Ω, VDD = 5 V Differential Output Voltage (6) VOD3 1.5 2.3 V RL = 54 Ω, VDD = 5 V Change in Magnitude (7) of Differential Output Voltage Δ|V OD | ±0.2 V R L = 54 Ω or 100 Ω Common Mode Output Voltage VOC 3 V RL = 54 Ω or 100 Ω Change in Magnitude (7) of Common Mode Output Voltage Δ|V OC | 0.2 V R L = 54 Ω or 100 Ω Output Current (4) 1 −0.8 mA mA Output disabled, V O = 12 V VO = −7 V |Short -circuit Output Current| IOS 60 250 mA −7 V < V O < 12 V Supply Current (V DD2 = +5 V) (V DD1 = +5 V) IDD2 IDD1 6 2.5 3 mA No Load (Outputs Enabled) Supply Current (V DD1 = +3.3 V) I DD2 1.3 2 mA No Load (Outputs Enabled) Common Mode Rejection |CM H|,|CM L| 15 20 kV/ μs VT = 300 V peak Switching Specifications (V DD1 = 5 V; V DD2 = 5 V; T = −40°C − 85°C) Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 5 Mbps RL = 54 Ω; CL = 50 pF; Cboost = 16pF Differential Output Prop Delay tD(OD) 40 65 ns Pulse Skew (10) tSK (P) 6 15 ns Differential Output Rise and Fall Time tT(OD) 3 12 25 ns Drive Enable Time to High Level tPZH 25 40 ns Drive Enable Time to Low Level tPZL 25 40 ns Drive Disable Time from High Level tPHZ 25 40 ns Drive Disable Time from Low Level tPLZ 25 40 ns Skew Limit (3) tSK (LIM) 8 ns Switching Specifications (V DD1 = 3.3 V; V DD2 = 5 V; T = −40°C − 85°C) Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 5 Mbps RL = 54 Ω; CL = 50 pF; Cboost = 16pF Differential Output Prop Delay tD(OD) 40 65 ns Pulse Skew (10) tSK (P) 6 20 ns Differential Output Rise and Fall Time tT(OD) 3 12 25 ns Drive Enable Time to High Level tPZH 25 40 ns Drive Enable Time to Low Level tPZL 25 40 ns Drive Disable Time from High Level tPHZ 25 40 ns Drive Disable Time from Low Level tPLZ 25 40 ns Skew Limit (3) tSK (LIM) 8 ns

Parameters Symbol Min. Typ. Max. Units Test Conditions Coil Resistance R COIL 47 85 112 Ω T = 25°C 31 85 128 Ω T = −40°C − 85°C Coil Resistance Temperature Coefficient TC R COIL 0.2 0.25 Ω/°C Positive -going Input Threshold VIT+ 0.2 V −7 V < V CM < 12 V Negative -going Input Threshold VIT− − 0.2 V −7 V < V CM < 12 V Hysteresis Voltage (V it+ − Vit− ) VHYS 70 mV VCM = 0V, T = 25 °C High Level Digital Output Voltage VOH VDD − 0.2 VDD − 0.2 V VID = 200 mV IOH = 4 mA Low Level Digital Output Voltage VOL 0.8 V VID = −200 mV IOL = 4 mA High impedance state output current I OZ 10 µA 0.4 ≤ VO≤ (V DD2 − 0.5) V Line Input Current (8) II 1 mA VI = 12 V − 0.8 VI = −7 V Input Resistance r I 12 25 kΩ Switching Specifications (V DD1 = 5 V; V DD2 = 5 V; C boost = 16pF; T = −40°C − 85°C) Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 5 Mbps RL = 54 Ω , C L = 50 pF Propagation Delay (9) tPD 50 85 ns −1.5 ≤ VO ≤ 1.5 V, CL = 15 pF Pulse Skew (10) t SK (P) 10 17 ns −1.5 ≤ VO ≤ 1.5 V, CL = 15 pF Skew Limit (3) t SK (LIM) 2 8 ns RL = 54 Ω , C L = 50 pF Read Enable Time to High Level tPZH 4 40 ns CL = 15 pF Read Enable Time to Low Level tPZL 4 40 ns Read Disable Time from High Level tPHZ 4 40 ns Read Disable Time from Low Level tPLZ 4 40 ns Switching Specifications (V DD1 = 3.3 V; V DD2 = 5 V; C boost = 16pF; T = −40°C − 85°C) Parameters Symbol Min. Typ. Max. Units Test Conditions Data Rate 5 Mbps RL = 54 Ω , C L = 50 pF Propagation Delay (9) tPD 55 85 ns −1.5 ≤ VO ≤ 1.5 V, CL = 15 pF Pulse Skew (10) t SK (P) 12 20 ns −1.5 ≤ VO ≤ 1.5 V, CL = 15 pF Skew Limit (3) t SK (LIM) 4 10 ns RL = 54 Ω , C L = 50 pF Read Enable Time to High Level tPZH 5 10 ns CL = 15 pF Read Enable Time to Low Level tPZL 5 10 ns Read Disable Time from High Level tPHZ 5 10 ns Read Disable Time from Low Level tPLZ 17 10 ns Insulation Specifications Parameters Symbol Min. Typ. Max. Units Test Conditions Comparative Tracking Index CTI ≥175 V Per IEC 60112 Endurance Voltage (Maximum Working Voltage for Indefinite Life) AC DC VIO 1000 1500 VRMS VDC At maximum operating temperature Creepage Distance (external) 0.15" SOIC 0.3" SOIC 4.03 8.03 8.3 mm Per IEC 60601 Total Barrier Thickness (internal) 0.012 0.013 mm Barrier Resistance (5) RIO >10 14 Ω 500 V Barrier Capacitance (5) CIO 7 pF f = 1 MHz Leakage Current 0.2 μA 240 V RMS , 60 Hz

Parameter Symbol Min. Typ. Max. Units Test Conditions Junction–Ambient Thermal Resistance 0.15" SOIC 0.3" SOIC θ JA °C/W Double-sided PCB in free air Junction–Case (Top) Thermal Resistance 0.15" SOIC 0.3" SOIC θ JC 8 Junction–Ambient Thermal Resistance 0.3" SOIC θ JA 46 2s2p PCB in free air per JESD51 Junction–Case (Top) Thermal Resistance θ JC 9 Power Dissipation 0.15" SOIC 0.3" SOIC PD 700 1500 mW Notes : 1. All voltages are with respect to network ground except differential I/O bus voltages. 2. Differential input/output voltage is measured a t the non-inverting terminal A with respect to the inverting terminal B. 3. Skew limit is the maximum difference in any two channels in one device. 4. The power-off measurement in ANSI Standard EIA/ TIA-422-B applies to disabled outputs only and is not applied to combined inputs and outputs. 5. All typical values are at V DD1 , V DD2 = 5 V or V DD1 = 3.3 V and T A = 25°C. 6. While −7 V < V CM < 12 V, the minimum V OD2 with a 54 Ω load is either ½ V OD1 or 1.5 V, whichever is greater. 7. Δ|VOD| and Δ|VOC| are the changes in magnitude of V OD and V OC , respectively, that occur when the input is changed from one logic state to the other. 8. This applies for both power on and power off; r efer to ANSI standard RS-485 for exact condition. The EIA/TIA-422-B limit does not apply for a combined driver and receiver terminal. 9. Includes 10 ns read enable time. Maximum propag ation delay is 25 ns after read assertion. 10. Pulse skew is defined as the |t PLH − t PHL | of each channel.

are logically high when the coil voltage is high, that is when there is no coil current. these values as approximate and should be adjusted for temperature or other application specifics. value up to a maximum of 470 pF. RS-485 and RS-422 are differential (balanced) data transmission standards for use over long distances or in noisy environments. supported by the corresponding driver. IL3000-Serie s receiver outputs have tri-state capabilities with active low RE inputs. and IL3185 drivers have tri-state capability with an active high DE input.

3.3 V 510 Ω

5 V 820 Ω

Figure 2. C boost Selector

VDD1 = V DD2 = 5 V R1, R2, R3 = 820 Ω VDD1 = 3.3 V R1, R2 = 510 Ω; R3 = 820 Ω VDD1 = V DD2 = 5 V R1, R2, R3 = 820 Ω VDD1 = 3.3 V R1, R2 = 510 Ω; R3 = 820 Ω Fail-Safe Operation “Fail-safe operation” is defined here as the forcin g of a logic high state on the “R” output in respon se to an open-circuit condition between the “A” and “B” lines of the bus, or when n o drivers are active on the bus. Proper biasing can ensure fail-safe operation, that is a known state when there are no active drivers on the bus. IL3185 and IL3122 Isolated Transceivers include internal pull-up and pull-down resistors of approximately 30 kΩ in the receiver section (R FS-INT ; see figure on following page). These internal resistors are designed to ensure failsafe operation but only if there are no termination resistors. The entire V DD will appear between inputs “A” and “B” if there is no loading and no termination resistors, and there will be more than the required 200 mV with up to four RS -485/RS-422 worst-case Unit Loads of 12 k Ω. Many designs operating below 1 Mbps or less than 1,000 feet are unterminated. Te rmination resistors may not be necessary for very l ow data rates and very short cable runs because reflections have time to settle before data sampling, which occurs at the middle of the bit interval. In busses with low-impedance termination resistors, however, the differential voltage across the conductor pair will be close to zero with no active drivers. In this case the state of the bus is indeterminate, and the idle bus will be susceptible to noise. For example, with 120 Ω termination resistors (R T) on each end of the cable, and four Unit Loads (12 kΩ each), without external fail- safe biasing resistors the internal pull-up and pul l-down resistors will produce a voltage between inputs “A” and “B” of only about 5 mV. This is not nearly enough to ensure a known s tate. External fail-safe biasing resistors (R FS-EXT ) at one end of the bus can ensure fail-safe operation with a terminated bus. Resistors should be selected so that under worst-case power supply and resistor tolerances there is at least 200 mV across the cond uctor pair with no active drivers to meet the input sensitivity specification of the RS-422 and RS-485 standards. Using the same value for pull-up and pull-down biasing resistors maintains balance for positive- and negative going transitions. Lower-value resistors increase inactive noise immun ity at the expense of quiescent power consumption. Note that each Unit Load on the bus adds a worst-case loading of 12 kΩ across the conductor pair, and 32 Unit Loads add 375 Ω worst-case loading. The more loads on the bus, the lower the required value s of the biasing resistors. In the example with two 120 Ω termination resistors and four Unit Loads, 560 Ω external biasing resistors provide more than 200 mV between “A” and “B” with adequate margin for power supply variations and resistor tolerances. This ensures a known state when there are no active drivers. Other illus trative examples are shown in the following table: R RE A B VDD2 VCOIL2 VCOIL1VDD1 DE D 16pF ±50% 16pF ±50% 16pF ±50%R2 A B Z R RE Y VCOIL2 VDD2 VCOIL1VDD1 DE D R316pF ±50% 16pF ±50% 16pF ±50%

unique creepage specifications. Standard pad librar ies often extend under the package, compromising cr eepage and clearance. layouts are included in this datasheet. logic state. A magnetic shield and a Wheatstone Bridge configuration provide good immunity to external magnetic fields. Figure 3. Orientation of External Magnetic Field

Table 1. Magnetic Immunity same input capacitor might provide just 70 Gauss immunity at 50 kHz.

0.15" 16 -pin SOIC Package (-3 suffix) 0.3" 16 -pin SOIC Package (no suffix) 0.386□(9.8) 0.394□(10.0) 0.049□(1.24) 0.051□(1.30) 0.007□(0.2) 0.013□(0.3) Pin□1□identified by either□an indent□or□a marked dot 0.004□(0.1) 0.012□(0.3) 0.016□(0.4) 0.050□(1.3) NOTE: Pin□spacing□is□a□BASIC dimension;□tolerances do□not□accumulate 0.054□(1.4) 0.072□(1.8) 0.228□(5.8) 0.244□(6.2) 0.150□(3.81) 0.157□(3.99) 0.054□(1.37) 0.062□(1.58) 0.013□(0.3) 0.020□(0.5) NOM Dimensions□in□inches□(mm);□scale□=□approx.□5X 0.049 (1.24) 0.051 (1.30) 0.017 (0.43)* 0.022 (0.56) 0.292 (7.42)* 0.299 (7.59) 0.007 (0.18)* 0.010 (0.25) 0.260 (6.60)* 0.280 (7.11) 0.033 (0.85)* 0.043 (1.10) 0.007 (0.2) 0.013 (0.3) Pin 1 identified by either an indent or a marked dot 0.08 (2.0) 0.10 (2.5) 0.397 (10.08) 0.413 (10.49) 0.394 (10.00) 0.419 (10.64) 0.092 (2.34) 0.105 (2.67) 0.004 (0.1) 0.012 (0.3) 0.016 (0.4) 0.050 (1.3) NOTE: Pin spacing is a BASIC dimension; tolerances do not accumulate 0.013 (0.3) 0.020 (0.5) Dimensions in inches (mm); scale = approx. 5X *Specified for True 8™ package to guarantee 8 mm creepage per IEC 60601.

0.15" 16 -pin SOIC Pad Layout 0.3" 16 -pin SOIC Pad Layout 0.050 (1.27) 0.275 (6.99) 0.020 (0.51)

16 PLCS

0.160 (4.06) Dimensions in inches (mm); scale = approx. 5X 0.050 (1.27) 0.449 (11.40) 0.020 (0.51) 0.317 (8.05) Dimensions in inches (mm); scale = approx. 5X

Ordering Information and Valid Part Numbers IL 31 85 -3 E TR13 Bulk Packaging Blank = Tube TR13 = 13'' Tape and Reel Package E = RoHS Compliant Package Type Blank = 0.3'' SOIC -3 = 0.15'' SOIC Channel Configuration 22 = RS-422 85 = RS-485 Base Part Number 31 = Passive-In, 5 Mbps Transceiver Product Family IL = Isolators Valid Part Numbers IL3185E IL3185E TR13 IL3185-3E IL3185-3E TR13 IL3122E IL3122E TR13 IL3122-3E IL3122-3E TR13 RoHS COMPLIANT

Revision History

  • Changed output drive table to 2 V output voltage (p . 1).
  • Footnote that HIGH is no coil-current flowing and L OW is coil-current flowing (p. 1).
  • Upgraded to VDE 0884-17 (p. 3).
  • Increased Working Voltage ratings based on latest V DE testing (p. 3). ISB-DS-001 IL3185/22-Q Changes
  • Clarified RS-485 truth table (p. 1).
  • Increased Working Voltage (V IORM ) to 600 V RMS (p.3).
  • Upgraded from VDE V 0884-10 to VDE V 0884-11 / IEC 60747-17 (p. 3).
  • Clarified IL3185-3E and IL3122-3E pin 8 should not be connected (p. 4).
  • Added thermal characteristics (p. 8). ISB-DS-001 IL3185/22-P Changes
  • IEC 60747-5-5 (VDE 0884) certification.
  • Upgraded from MSL 2 to MSL 1.
  • Rearranged low level input current specification so maximum is more than minimum. ISB-DS-001 IL3185/22-O Changes
  • Added VDE 0884 pending.
  • Clarified switching specifications.
  • Updated package drawings.
  • Added recommended solder pad layouts. ISB-DS-001 IL3185/22-N Changes
  • Detailed isolation and barrier specifications.
  • Cosmetic changes. ISB-DS-001-IL3185/22-M Changes
  • Added minimum/maximum coil resistance specification s.
  • Misc. cosmetic changes. ISB-DS-001-IL3185/22-L Changes
  • Update terms and conditions. ISB-DS-001-IL3185/22-K Changes
  • Clarified ground pin connections (pp. 3-4). ISB-DS-001-IL3185/22-J Changes
  • Changes to current-limiting resistor values (pp. 7 and 10).
  • Details for boost capacitor selection (p. 7). ISB-DS-001-IL3185/22-I Changes
  • Noted UL1577 approval.

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