IFN860 INTERFET | Alldatasheet
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Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 20 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 400 mW Power Derating 2.3 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ71 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature: IFN860 Process NJ450L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 20 V I G = – 1 µA, VDS = ØV Gate Reverse Leakage Voltage I GSS 3n A V GS = – 10V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 0.3 – 3 V V DS = 10V, ID = 100 µA Drain Saturation Current (Pulsed) I DSS 10 mA V DS = 10V, VGS = Ø V Differential Gate Source Voltage |VGS1– VGS2| 25 mV V DS = 10V, ID = 100 µA Dynamic Electrical Characteristics Transconductance g m 25 40 mS V DS = 10V, ID = – 10 mA f = 1 kHz Common Source Input Capacitance C iss 30 35 pF V DS = 10V, ID = – 10 mA f = 1 MHz Common Source Reverse Transfer Crss 17 20 pF V DS = 10V, ID = – 10 mA f = 1 MHzCapacitance Equivalent Short Circuit ¯eN 2 nV/√Hz VDG = 3V, ID = 10 mA f = 1 kHzInput Noise Voltage ¥ Low-Noise Audio Amplifier ¥ Equivalent to Crystalonics CD860 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/14/99 12:22 PM Page B-43