IFN5565 INTERFET | Alldatasheet
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IFN5564, IFN5565, IFN5566 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Wide Band Differential Amplifier ¥ Commutators Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 650 mW Power Derating 3.3 mW/°C TOÐ71 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature: IFN5564 IFN5565 IFN5566 Process NJ72 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 – 40 – 40 V I G = – 1µA, V DS = ØV Gate Leakage Voltage I GSS – 100 – 100 – 100 pA V GS = – 20V, VDS = ØV – 200 – 200 – 200 nA T A = 150°C Gate Source Cutoff Voltage V GS(OFF) – 0.5 – 3 – 0.5 – 3 – 0.5 – 3 V V DS = 15V, ID = 1 nA Gate Source Voltage V GS(f) 111 V V DS = ØV, I G = 2 mA Saturation Current (Pulsed) I DSS 53 053 053 0 m AV DS = 15V, VGS = ØV Static Drain Source ON Resistance rDS (ON) 100 100 100 Ω ID = 1 mA, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 7000 12500 7000 12500 7000 12500 µhmo V DG = 15V, ID = 2 mA f = 1 kHz Forward Transconductance 7000 7000 7000 µhmo f = 100 MHz Common Source Output Transconductance gos 45 45 45 µhmo V DS = 15V, ID = 2 mA f = 1 kHz Common Source Input Capacitance C iss 12 12 12 pF V DS = 15V, ID = 2 mA f = 1 MHz Common Source Reverse Transfer CapacitanceCrss 333 p F V DS = 15V, ID = 2 mA f = 1 MHz Noise Figure NF 1 1 1 dB VDS = 15V, ID = 2 mA f = 10 HzRG = 1 MΩ Equivalent Short Circuit Input Noise Voltage ¯eN 50 50 50 nV/√Hz VDG = 15V, ID = 2 mA f = 10 Hz Characteristics Saturation Drain Current Ratio (Pulsed) I DSS1 0.95 1 0.95 1 0.95 1 – V DG = 15V, VGS = ØV IDSS2 – Differential Gate Source Voltage |V GS(1)– VGS(2)| 5 10 20 mV V DS = 15V, ID = 2 mA Gate Source Voltage Differential Drift ∆|VGS(f)– VGS(f)| 10 25 50 µV/°C V DS = 15V, T A = 25°C T B = 125°C ∆T 1 02 55 0 µ V / ° C I D = 2 mA T A = 55°C T B = 25°C Transconductance Ratio (Pulsed) g fs(1) 0.95 1 0.9 1 0.9 1 – V DS = 15V, ID = 2 mA gfs(2) – 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-46