IFN146 INTERFET | Alldatasheet
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Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ71 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
At 25°C free air temperature: IFN146 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 1 nA V GS = – 30V, VDS = ØV – 1 µA V GS = – 30V, VDS = ØV T A = 150°C Gate Source Cutoff Voltage V GS(OFF) – 0.3 – 1.2 V V DS = 10V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 30 mA V DS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 30 40 mS VDS = 10V, VGS = ØV f = 1 kHzForward Transconductance I DSS = 5 mA Common Source Input Capacitance C iss 75 pF V DS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Crss 15 pF VDS = 10V, ID = ØA f = 1 kHzTransfer Capacitance Noise Figure NF 1 dB VDS = 10V, ID = 5 mA f = 1 kHzRG = 100Ω Differential Gate Source Voltage |VGS1– VGS2| 20 mV V DS = 10V, ID = 5 mA ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page D-5