IFD89 INTERFET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 4

Technical content

Features

  • InterFET N0014EU Geometry
  • Low Noise: 5 nV/√Hz Typical
  • Low Leakage: 2pA Typical
  • Low Ciss: 2.3pF Typical
  • RoHS Compliant
  • SMT, TH, and Bare Die Package options.

Applications

  • Hearing Aids
  • Mini Microphones
  • Infrared Detector Amplifiers
  • Battery Powered Amplifiers
  • High Gain, Low-Noise Amplifiers
  • Replacement for IFND89

Description

The -15V high gain, low noise InterFET IFND89 comes in several package options and is optimized for low power audio applications. The integrated back to back diodes offers clamping and additional gate leakage. Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFD89T72 Through Hole TO-72 Bulk IFD89SC5 Surface Mount SC70-5 Bulk IFD89SC5TR 7“ Tape and Reel: Max 3,000 Pieces 13” Tape and Reel: Max 9,000 Pieces SC70-5 Minimum 1,000 Pieces Tape and Reel IFD89COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFD89CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Product Summary Parameters IFD89 Min Unit BVGSS Gate to Source Breakdown Voltage -15 V IDSS Drain to Source Saturation Current 0.05 mA VGS(off) Gate to Source Cutoff Voltage -0.2 V GFS Forward Transconductance 0.6 mS 3 4 5Diode Gate N/C Source Drain SOT353 (SC70-5) Top View TO-72 Bottom View Gate Source Drain 4 Diode/Case

www.InterFET.com IFD89 Document Number: IF35101.R00 InterFET Corporation June, 2019 InterFET Product Folder Technical Support Order Now Order Now IFD89

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions IFD89 UnitMin Max V(BR)GSS Gate to Source Breakdown Voltage VDS = 0V, IG = -1μA -15 V IGSS Gate to Source Reverse Current VGS = -10V, VDS = 0V -0.10 nA VGS(OFF) Gate to Source Cutoff Voltage VDS = 1.3V, ID = 1μA VDS = 3.3V, ID = 1μA -0.2 -0.2 -0.9 -2.5 V IDSS Drain to Source Saturation Current VGS = 0V, VDS = 0.92V (Pulsed) 50 1000 μA V(BR)Gdiode Gate to Diode Breakdown Voltage + IG = 10μA, VDS = 0V 0.4 0.8 V V(BR)Gdiode Gate to Diode Breakdown Voltage - IG = -10μA, VDS = 0V -0.4 -0.8 V Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -15 V IFG Continuous Forward Gate Current 10 mA PD Continuous Device Power Dissipation 250 mW P Power Derating 2 mW/°C TJ Operating Junction Temperature -55 to 125 °C TSTG Storage Temperature -55 to 150 °C Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions IFD89 UnitMin Max RDS(ON) Drain to Source ON Resistance VDS ≤0.1V, ID ≤100μA, f = 1kHz 3000 Ω GFS Forward Transconductance VDS = 1.3V, VGS = 0V, f = 1kHz 0.6 2.25 mS Ciss Input Capacitance VDS = 1.3V, VGS = 0V, f = 1MHz 5 pF en Equivalent Circuit Input Noise Voltage VDS = 1.3V, VGS = 0V, f = 100Hz 12 nV/√Hz

www.InterFET.com IFD89 Document Number: IF35101.R00 InterFET Corporation June, 2019 InterFET Product Folder Technical Support Order Now Order Now IFD89 TO-72 Mechanical and Layout Data Package Outline Data Suggested Through-Hole Layout 1. All linear dimensions are in millimeters. 2. Four leaded device. Not all leads are shown in drawing views. 3. Package weight approximately 0.31 grams 4. Bulk product is shipped in standard ESD shipping material 5. Refer to JEDEC standards for additional information. 1. All linear dimensions are in millimeters. 2. The suggested land pattern dimensions have been provided as a straight lead reference only. A more robust pattern may be desired for wave soldering and/or bent lead configurations.

www.InterFET.com IFD89 Document Number: IF35101.R00 InterFET Corporation June, 2019 InterFET Product Folder Technical Support Order Now Order Now IFD89 SC70-5 (SOT353) Mechanical and Layout Data Package Outline Data Suggested Pad Layout 1. All linear dimensions are in millimeters. 2. Package weight approximately 0.07 grams 3. Molded plastic case UL 94V-0 rated 4. For Tape and Reel specifications refer to InterFET CTC-021 Tape and Reel Specification, Document number: IF39002 5. Bulk product is shipped in standard ESD shipping material 6. Refer to JEDEC standards for additional information. 1. All linear dimensions are in millimeters. 2. The suggested land pattern dimensions have been provided for reference only. A more robust pattern may be desired for wave soldering.