IFBF510 INTERFET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

  • InterFET N0026 Geometry
  • Low Noise: 3 nV/√Hz Typical
  • Low Ciss: 5.0pF Maximum
  • Low Leakage: 10pA Typical
  • RoHS Compliant
  • SMT, TH, and Bare Die Package options.

Applications

  • Low Noise High Gain
  • Replacement for BF510 and BF511
  • Mixers
  • Oscillators
  • VHF Amplifiers

Description

The -20V InterFET IFBF510 and IFBF511 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFBF510; IFBF511 Through-Hole TO-72 Bulk PNBF510; PNBF511 Through-Hole TO-92 Bulk SMPBF510; SMPBF511 Surface Mount SOT23 Bulk SMPBF510TR; SMPBF511TR 7“ Tape and Reel: Max 3,000 Pieces 13” Tape and Reel: Max 9,000 Pieces SOT23 Minimum 1,000 Pieces Tape and Reel IFBF510COT; IFBF511COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFBF510CFT; IFBF511CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Source Drain Gate SOT23 Top View Product Summary Parameters IFBF510 Min IFBF511 Min Unit BVGSS Gate to Source Breakdown Voltage -20 -20 V IDSS Drain to Source Saturation Current 0.7 2.5 mA VGS(off) Gate to Source Cutoff Voltage -0.8 (typ) -1.5 (typ) V GFS Forward Transconductance 2.5 4 mS TO-72 Bottom View Gate Source Drain 4 Case Source Gate Drain TO-92 Bottom View Note: The SOT23 package is pinned out differently than the BF51x part to optimize thermal performance. Package and pinout variations are available through InterFET custom ordering.

www.InterFET.com IFBF510-1 Document Number: IF35112.R00 InterFET Corporation April, 2020 IFBF510-1InterFET Product Folder Technical Support Order Now Order Now

Electrical Characteristics

Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V IFG Continuous Forward Gate Current 10 mA PD Continuous Device Power Dissipation 300 mW P Power Derating 1.7 mW/°C TJ Operating Junction Temperature -55 to 125 °C TSTG Storage Temperature -65 to 150 °C Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions IFBF510 IFBF511 UnitMin Max Min Max V(BR)GSS Gate to Source Breakdown Voltage VDS = 0V, IG = -1μA -20 -20 V IGSS Gate to Source Reverse Current VGS = -15V, VDS = 0V, TA = 25°C -10 -10 nA VGS(F) Gate to Source Forward Voltage VDS = 0V, IG = 1mA 1 1 V VGS(OFF) Gate to Source Cutoff Voltage VDS = 10V, ID = 1nA -0.5 -0.8 V IDSS Drain to Source Saturation Current VGS = 0V, VDS = 10V (Pulsed) 0.7 3.0 2.5 7.0 mA Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions IFBF510 IFBF511 UnitMin Max Min Max GFS Forward Transconductance VDS = 10V, VGS = 0V, f = 1kHz 2.5 4 mS GOS Output Conductance VDS = 10V, VGS = 0V, f = 1MHz 60 80 uS Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1MHz 5 5 pF Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1MHz 1.5 1.5 pF

www.InterFET.com IFBF510-1 Document Number: IF35112.R00 InterFET Corporation April, 2020 IFBF510-1InterFET Product Folder Technical Support Order Now Order Now SOT23 (TO-236AB) Mechanical and Layout Data Package Outline Data Suggested Pad Layout 1. All linear dimensions are in millimeters. 2. Package weight approximately 0.12 grams 3. Molded plastic case UL 94V-0 rated 4. For Tape and Reel specifications refer to InterFET CTC-021 Tape and Reel Specification, Document number: IF39002 5. Bulk product is shipped in standard ESD shipping material 6. Refer to JEDEC standards for additional information. 1. All linear dimensions are in millimeters. 2. The suggested land pattern dimensions have been provided for reference only. A more robust pattern may be desired for wave soldering.

www.InterFET.com IFBF510-1 Document Number: IF35112.R00 InterFET Corporation April, 2020 IFBF510-1InterFET Product Folder Technical Support Order Now Order Now TO-72 Mechanical and Layout Data Package Outline Data Suggested Through-Hole Layout 1. All linear dimensions are in millimeters. 2. Four leaded device. Not all leads are shown in drawing views. 3. Package weight approximately 0.31 grams 4. Bulk product is shipped in standard ESD shipping material 5. Refer to JEDEC standards for additional information. 1. All linear dimensions are in millimeters. 2. The suggested land pattern dimensions have been provided as a straight lead reference only. A more robust pattern may be desired for wave soldering and/or bent lead configurations.

www.InterFET.com IFBF510-1 Document Number: IF35112.R00 InterFET Corporation April, 2020 IFBF510-1InterFET Product Folder Technical Support Order Now Order Now TO-92 Mechanical and Layout Data Package Outline Data Suggested Through-Hole Layout 1. All linear dimensions are in millimeters. 2. Package weight approximately 0.19 grams 3. Molded plastic case UL 94V-0 rated 4. Bulk product is shipped in standard ESD shipping material 5. Refer to JEDEC standards for additional information. 1. All linear dimensions are in millimeters. 2. The suggested land pattern dimensions have been provided as a straight lead reference only. A more robust pattern may be desired for wave soldering and/or bent lead configurations.