IF4500 INTERFET | Alldatasheet
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N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 225 mW Power Derating 1.8 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ236AB Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF4500 Process NJ450L Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 20 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.1 nA V GS = – 30V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 0.35 – 1.5 V V DS = 15V, ID = 0.5 nA Drain Saturation Current (Pulsed) I DSS 5m A V DS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 15 mS V DS = 15V, ID = 5 mA f = 1 kHz Forward Transconductance Common Source Input Capacitance C iss 35 pF V DS = 15V, VGS = ØV f = 1 MHz Common Source Crss 8p F V DS = 15V, VGS = ØV f = 1 MHz Reverse Transfer Capacitance Typ Equivalent Short Circuit ¯eN 1.5 nV/ √Hz V DS = 12V, VGS = ØV f = 1 kHz Input Noise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 1:51 PM Page B-36