IF140 INTERFET | Alldatasheet
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IF140, IF140A N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ72 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: IF140 IF140A Process NJ14AL Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 20 – 20 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.1 – 0.1 nA V GS = – 15V, VDS = ØV – 0.2 – 0.2 nA V GS = – 15V, VDS = ØV T A = 150°C Gate Source Cutoff Voltage V GS(OFF) – 6 – 6 V V DS = 15V, ID = 5 nA Gate Source Voltage V GS – 5 – 2.5 – 6 V V DS = 15V, ID = 50 µA Gate Source Forward Voltage V GS(F) 11 V V DS = Ø, I G = 1 mA Drain Saturation Current (Pulsed) I DSS 51 551 5 m AV DS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs 4.5 4.5 mS V DS = 15V, VGS = ØV f = 1 kHz Common Source Output Conductance Y os 0.05 0.05 µS V DS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance C iss 33 p F V DS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Crss 0.6 0.6 pF V DS = 15V, VGS = ØV f = 1 MHzTransfer Capacitance Typ Typ Equivalent Short Circuit ¯eN 44 nV/√Hz VDS = 12V, VGS = ØV f = 10 HzInput Noise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-28