HCT7000M OPTEK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- 200mA ID
- Ultra small surface mount package
- RDS(ON) < 5Ω
- Pin-out compatible with most SOT23 MOSFETS De scrip tion The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pin- out and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages. The HCT7000M is available processed to TX and TXV levels per MIL-PRF- 19500. Order HCT7000MTX or HCT7000MTXV. Typical screening and lot acceptance tests are provided on page 13-4. TX and TXV products receive a VGS HTRB at 24 V for 48 hrs. at 150o C and a VDS HTRB at 48 V for 260 hrs. at 150o C. Ab so lute Maxi mum Rat ings Notes: (1) TS = Substrate temperature that the chip carrier is mounted on. (2) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measurable as an outgoing test. Prod uct Bul le tin HCT7000M Janu ary 1996 N- Channel En hance ment Mode MOS Tran sis tor Type HCT7000M, HCT7000MTX, HCT7000MTXV Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 15-36
Types HCT7000M, HCT7000MTX, HCT7000MTXV Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) SYM BOL PA RAME TER MIN MAX UNITS TEST CON DI TION VDSS Drain-Source Voltage 60 V VGS = 0 V, ID = 10 µA VGS(TH) Gate Threshold Voltage .8 3.0 V VDS = VGS, ID = 1 mA IGSS Gate Leakage ±10 nA VDS = 0 V, VGS = ±15 V IDSS Zero Gate Voltage Drain Current 1 µA VGS = 0 V, VDS = 48 V ID(ON) On-State Drain Current 75 mA VDS = 10 V, VGS = 4.5 V RDS(ON) Drain-Source on-Resistance 5 Ω VGS = 10 V, ID = 0.5 A VDS(ON) Drain-Source on-Voltage 2.5 V VGS = 10 V, ID = 0.5 A Gfs Forward Transconductance 100 mS VDS = 10 V, ID = 0.2 A Ciss Input Capacitance 60 pF VDS = 25 V, VGS = 0 V, f = 1MHz Coss Output Capacitance 25 pF Crss Reverse Transfer Capacitance 5 pF t(on) Turn-on Time 10 ns VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25 Ω t(off) Turn-off Time 10 ns 15-37