HCC640 OPTEK | Alldatasheet

Document overview

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Technical content

  • Surface mountable on ceramic or PC board
  • 6N140A operating compatibility
  • Key parameters guaranteed over -55o C to +125o C ambient temperature range
  • Hermetically sealed
  • Low power consumption
  • High current transfer ratio
  • Low input current requirement
  • 1500 VDC isolation voltage De scrip tion The HCC 640 is a hermetically sealed, ceramic surface-mount optocoupler, consisting of a GaAlAs IRED coupled to an integrated high gain photodiode. The HCC640 is designed to be electrically equivalent to a single channel of the JEDEC 6N140 quad-channel device. The high gain, open-collector output provides both lower output saturation voltage and faster switching speeds than possible with standard photodarlington optocouplers. The high current transfer ratio at very low input currents makes the HCC640 ideal for use in MOS, CMOS and low power logic interfacing. The HCC640 is capable of operation and storage over the full military temperature range and can be supplied with full processing per Optek’s Military screening procedure (based on MIL-STD-883) upon request. Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) In put Di ode Out put Pho to de tec tor Notes: (1) Derate IF at 0.66 mA/o C above 110o C. (2) Output power is collector output power plus one half of the total supply power. Derate at 5 mW/o C above 110o C. Typical screening and lot acceptance tests are provided on page 13-4. For Hi-Rel order HCC640B. Minimum orders may apply. Prod uct Bul le tin HCC640 Sep tem ber 1996 Sur face Mount Op ti cally Cou pled Iso la tor Types HCC640, HCC640B Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 15-30

Types HCC640, HCC640B Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 Elec tri cal Char ac ter is tics (TA = -55o C to +125o C un less oth er wise noted) SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS In put Di ode VF Forward Voltage 1.70 V IF = 1.60 mA, TA = 25o C BVR Reverse Breakdown Voltage 5.0 V IR = 10 µA, TA = 25o C ΔVF ΔTA Temperature Coefficient of Forward Voltage -1.80 mV/o C IF = 1.60 mA Cou pled CTR Current Transfer Ratio 300 1500 % IF = 0.5 mA, VO = 0.4 V, VCC = 4.5 V 300 1000 % IF = 1.60 mA, VO = 0.4 V, VCC = 4.5 V 200 500 % IF = 5.0 mA, VO = 0.4 V, VCC = 4.5 V VOL Logic Low Output Voltage 0.2 0.4 V IF = 5.0 mA, IOL = 10 mA, VCC = 4.5 V IOH Logic High Output Current 0.001 250 µA VO = VCC = 18 V ICCL Logic Low Supply Current 0.40 1.0 mA IF = 1.60 mA, VCC = 18 V ICCH Logic High Supply Current 0.001 10 µA IF = 0, VCC = 18 V II-O Input-Output Insulation Leakage Current 1.0 µA 45% Relative Humidity, TA = 25o C t = 5 sec, VI-O = 1500 Vdc RI-O Resistance (Input-Output) 1012 Ω VI-O = 500 Vdc CI-O Capacitance (Input-Output) 1.5 pF f = 1 MHz, TA = 25o C CI-I Capacitance (Input-Input) 1.0 pF f = 1 MHz, TA = 25o C CIN Input Capacitance 60 pF f = 1 MHz, VF = 0, TA = 25o C II-I Input-Input Insulation Leakage Current 0.5 nA 45% Relative Humidity, VI-I = 500 V TA = 25o C, t = 5 sec RI-I Resistance (Input-Input) 1012 Ω VI-I = 500 V, TA = 25o C Switch ing Speci fi ca tion (TA = 25o C) tPLH Propagation Delay Time to Logic High at Output 6.0 60 µs IF = 0.5 mA, RL = 4.7 kΩ, VCC = 5 V 4.0 20 µs IF = 5 mA, RL = 680 Ω, VCC = 5 V tPHL Propagation Delay Time to Logic Low at Output 30 100 µs IF = 0.5 mA, RL = 4.7 kΩ, VCC = 5 V 2.0 5.0 µs IF = 5 mA, RL = 680 Ω, VCC = 5 V CMH Common Mode Transient Immunity at Logic High Level Level Output 500 1000 V/µs IF = 0, RL = 1.5 kΩ  VCM = 50 VP-P VCC = 5 V CML Common Mode Transient Immunity at Logic Low Level Level Output -500 -1000 V/µs IF = 1.60 mA, RL = 1.5 kΩ  VCM = 50 VP-P VCC = 5 V 15-31