H6084B JINGDAO | Alldatasheet
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深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H6084B www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 1 页 2013 版 ◆Si NPN ◆RoHS COMPLIANT 11 11．． ．．APPLICATION Computer aided power and Switch-mode power supplies 22 22．． ．．FEATURES /circle6 High voltage capability /circle6 Features of good high temperature /circle6 High switching speed 33 33．． ．．PACKAGE SOT-82 44 44．． ．．Electrical Characteristics 44 44.1 .1 .1 .1 Absolute Maximum Ratings Tamb = 25 ℃ unless specified PARAMETER SYMBOL V ALUE UNIT Collector-Base V oltage V CBO 1400 V Collector-Emittor V oltage V CEO 800 V Emittor- Base V oltage V EBO 9 V Collector Current I C 3 A Ta=25 ℃ 1.25 Power Dissipation Tc=25 ℃ Ptot 40 W Junction Temperature T j 150 ℃ Storage Temperature T stg -55 ～150 ℃ 44 44.2 .2 .2 .2 Electrical Parameter Tamb = 25 ℃ unless specified V ALUE PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Base V oltage BV CBO IC =1mA ，IE=0 1400 V Collector-Emittor V oltage BV CEO IC =1mA ，IB =0 800 V Emittor-Base V oltage BV EBO IE=1mA ，IC =0 9 V Collector-Base Cutoff Current ICBO V CB =1400V , I E=0 10 μA Collector-Emittor Cutoff Current ICEO V CE =800V , I B =0 20 μA Emittor-Base Cutoff Current IEBO V EB =9V , I C =0 10 μA V CE =5V , IC =1mA 8 DC Current Gain hFE * V CE =5V , IC =200mA 15 35 Collector-Emittor Saturation V oltage V CE sat I C =1A, IB =0.5A 0.6 V Base-Emittor Saturation V oltage V BE sat * I C =1A, IB =0.5A 1.5 V Rising Time tr 3.0 μs Falling Time tf 3.0 μs Storage Time ts IC =500mA (UI9600) 2 4.5 μs Typical Frequency fT V CE =10V ,I C =100mA, f=1MHz 4 MHz ＊: Pulse test tp ≤300 μs, δ≤2%
1 Base(B) 2 Collector(C) 3 Emitter(E)
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H6084B www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 2 页 2013 版 55 55.. .. Characteristic Curve 0.01 50 Ptot (W) V CE (V) Tc ( C) 0 150 100 0 IC (A) 1.0 0.1 1000 100 10 1 Fig3 Static Characteristic Fig4 hFE -IC IB =50mA IB =10mA IB =5mA IC (A) 0.5 V CE (V) 10 50 100 0.01 0.1 1 10 IC (A) hFE Fig5 V CEsat -IC Fig6 V BEsat -IC 0.1 1 10 0.01 0.1 Ic (A) V CE sat (V) 0.1 1 3 Ic (A) V BE sat (V) 0.03 Ta=25 ℃ Ta=25 ℃ Ta=25 ℃ V CE =5V Ta=25 ℃ IC /I B =2 Ta=25 ℃ IC /I B =2 Ptot -Tc Ptot -Ta
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H6084B www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 3 页 2013 版 66 66．． ．．Package Dimentions(Unit ：： ：：mm) SOT SOT SOT SOT-- --82 82 82 82