P1488 JINGDAO | Alldatasheet
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深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 P1488 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 1 页 2013 版 ◆Si NPN ◆RoHS COMPLIANT 11 11．． ．．APPLICATION Fluorescent Lamp 、Electronic Ballast、 Computer Switch Power Supply 22 22．． ．．FEATURES /circle6 High voltage capability /circle6 Features of good high temperature /circle6 High switching speed 33 33．． ．．PACKAGE TO-3PB 44 44．． ．．Electrical Characteristics 44 44.1 .1 .1 .1 Absolute Maximum Ratings Tamb = 25 ℃ unless specified PARAMETER SYMBOL V ALUE UNIT Collector-Base V oltage V CBO 750 V Collector-Emittor V oltage V CEO 450 V Emittor- Base V oltage V EBO 9 V Collector Current I C 15 A Ta=25 ℃ 3 Power Dissipation Tc=25 ℃ Ptot 150 W Junction Temperature T j 150 ℃ Storage Temperature T stg -55 ～150 ℃ 44 44.2 .2 .2 .2 Electrical Parameter Tamb = 25 ℃ unless specified V ALUE PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Base V oltage BV CBO IC =1mA ，IE=0 750 V Collector-Emittor V oltage BV CEO IC =1mA ，IB =0 450 V Emittor-Base V oltage BV EBO IE=1mA ，IC =0 9 V Collector-Base Cutoff Current ICBO V CB =750V , I E=0 10 μA Collector-Emittor Cutoff Current ICEO V CE =450V , I B =0 20 μA Emittor-Base Cutoff Current IEBO V EB =9V , I C =0 10 μA V CE =5V , IC =1mA 8 DC Current Gain hFE * V CE =5V , IC =3A 15 40 Collector-Emittor Saturation V oltage V CE sat I C =8A, IB =4A 0.8 V Base-Emittor Saturation V oltage V BE sat * I C =8A, IB =4A 1.5 V Rising Time tr 0.6 μs Falling Time tf 0.10 0.4 μs Storage Time ts IC =500mA (UI9600) 3.0 5.0 μs Typical Frequency fT V CE =10V ,I C =0.5A, f=1MHz 5 MHz ＊: Pulse test tp ≤300 μs, δ≤2%
1 Base(B) 2 Collector(C) 3 Emitter(E)
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 P1488 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 2 页 2013 版 55 55.. .. Characteristic Curve 1 10 100 1000 0.1 1.0 C V CE (V) 0.01 0 100 150 0 120 Tc ( ° C) Ptot (W) 60 Fig3 Static Characteristic Fig4 hFE -IC IB =500mA IB =100mA IB =50mA IC (A) 5.0 V CE (V) 10 50 1mA IC (A) hFE 1 10 0.1 0.01 30 Fig5 V CEsat -IC Fig6 V BEsat -IC 0.1 1 10 40 0.01 0.1 Ic (A) V CE sat (V) 0.5 1.0 1.5 Ic (A) V BE sat (V) 0.01 10 40 10.1 Ta=25 ℃ Ta=25 ℃ Ta=25 ℃ V CE =5V Ta=25 ℃ IC /I B =2 Ta=25 ℃ IC /I B =2 Ptot -Tc Ptot -Ta
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 P1488 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 3 页 2013 版 66 66．． ．．Package Dimentions(Unit ：： ：：mm) TO TO TO TO-- --3PB 3PB 3PB 3PB