H13003D JINGDAO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H13003D www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 1 页 2013 版 ◆Si NPN ◆RoHS COMPLIANT 11 11．． ．．APPLICATION Fluorescent Lamp 、Electronic Ballast、 and Switch-mode power supplies 22 22．． ．．FEATURES /circle6 High voltage capability /circle6 Intergrated antiparallel collector-emitter diode /circle6 Features of good high temperature /circle6 High switching speed 33 33．． ．．PACKAGE TO-126S 44 44．． ．．Electrical Characteristics 44 44.1 .1 .1 .1 Absolute Maximum Ratings Tamb = 25 ℃ unless specified PARAMETER SYMBOL V ALUE UNIT Collector-Base V oltage V CBO 650 V Collector-Emittor V oltage V CEO 400 V Emittor- Base V oltage V EBO 9 V Collector Current I C 2.0 A Ta=25 ℃ 1.25 Power Dissipation Tc=25 ℃ Ptot 26 W Junction Temperature T j 150 ℃ Storage Temperature T stg -55 ～150 ℃ 44 44.2 .2 .2 .2 Electrical Parameter Tamb = 25 ℃ unless specified V ALUE PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Base V oltage BV CBO IC =1mA ，IE=0 650 V Collector-Emittor V oltage BV CEO IC =1mA ，IB =0 400 V Emittor-Base V oltage BV EBO IE=1mA ，IC =0 9 V Collector-Base Cutoff Current ICBO V CB =650V , I E=0 10 μA Collector-Emittor Cutoff Current ICEO V CE =400V , I B =0 20 μA Emittor-Base Cutoff Current IEBO V EB =9V , I C =0 10 μA V CE =5V , IC =1mA 8 DC Current Gain hFE * V CE =5V , IC =200mA 15 30 Collector-Emittor Saturation V oltage V CE sat I C =1A, IB =0.5A 0.6 V Base-Emittor Saturation V oltage V BE sat * I C =1A, IB =0.5A 1.2 V Rising Time tr 0.5 μs Falling Time tf 0.5 μs Storage Time ts IC =250mA (UI9600) 2.1 3.3 μs Typical Frequency fT V CE =20V ,I C =20mA, f=1MHz 5 MHz ＊: Pulse test tp ≤300 μs, δ≤2%

1 Base(B) 2 Collector(C) 3 Emitter(E)

深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H13003D www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 2 页 2013 版 55 55.. .. Characteristic Curve 1 10 100 1000 0.1 1.0

4.0 IC (A)

Tc ( ° C) V CE (V) Ptot (W) 12 50 0.01 Fig3 Static Characteristic Fig4 hFE -IC 0.01 0.1 10 1 hFE IC (A) 1mA 100 IB =100mA IB =20mA IB =10mA IC (A) V CE (V) 10 50 Fig5 V CEsat -IC Fig6 V BEsat -IC 10 10.1 0.01 1mA 0.01 0.1 Ic (A) V CE sat (V) 1mA 0.1 10 0.5 1.0 1.5 Ic (A) V BE sat (V) 10.01 Ta=25 ℃ Ta=25 ℃ Ta=25 ℃ V CE =5V Ta=25 ℃ IC /I B =2 Ta=25 ℃ IC /I B =2 Ptot -Tc Ptot -Ta

深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 H13003D www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 3 页 2013 版 66 66．． ．．Package Dimentions(Unit ：： ：：mm) TO TO TO TO-- --126 126 126 126SS SS