GTT8209E ETL | Alldatasheet

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  • Lower Gate Charge *Small Package Outline *RoHS Compliant Package Dimensions A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 0° 10° c 0.12 REF. b 0.30 0.50 D 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25: 7 A Continuous Drain Current3 ID @TA=70: 5.7 A Pulsed Drain Current1,2 IDM 30 A Total Power Dissipation PD @TA=25: 1.2 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 110 :/W BVDSS 20V RDS(ON) 21m ID 7A Pb Free Plating Product

GTT8209E Page: 2/4 ISSUED DATE :2006/08/08 REVISED DATE : Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 24 - S VDS=5V, ID=7A Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±10V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=16V, VGS=0 Drain-Source Leakage Current(Tj=55:) IDSS - - 5 uA VDS=16V, VGS=0 - - 21 VGS=10V, ID=7.0A - - 24 VGS=4.5V, ID=6.6A - - 32 VGS=2.5V, ID=5.5A Static Drain-Source On-Resistance RDS(ON) - - 50 m VGS=1.8V, ID=2.0A Total Gate Charge2 Qg - 9.3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain (“Miller”) Change Qgd - 3.6 - nC ID=7A VDS=10V VGS=4.5V Turn-on Delay Time2 Td(on) - 5.7 - Rise Time Tr - 11.5 - Turn-off Delay Time Td(off) - 31.5 - Fall Time Tf - 9.7 - ns VDS=10V VGS=5V RG=3 RL=1.4 Input Capacitance Ciss - 630 Output Capacitance Coss - 164 - Reverse Transfer Capacitance Crss - 137 - pF VGS=0V VDS=10V f=1.0MHz Gate Resistance Rg - 1.5 - f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time2 Trr - 15.2 - ns Reverse Recovery Charge Qrr - 6.3 - nC IS=7A, VGS=0V dI/dt=100A/s Continuous Source Current (Body Diode) IS - - 2.5 A VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec ; 180:/W when mounted on Min. copper pad.

GTT8209E Page: 3/4 ISSUED DATE :2006/08/08 REVISED DATE : Characteristics Curve 0.00001 0.0001 0.001 0.01 0.1 Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature

GTT8209E Page: 4/4 ISSUED DATE :2006/08/08 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance Curve