GT6924E ETL | Alldatasheet

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*Lower on-resistance *Fast Switching Characteristic *Included Schottky Diode Package Dimensions Millimeter Dimensions REF. Min. Max. REF. Millimeter A 2.70 3.10 G 1.90 REF. B 2.60 3.00 H 1.20 REF. C 1.40 1.80 I 0.12 REF. D 0.30 0.55 J 0.37 REF. E 0 0.10 K 0.60 REF. F 0° 10° L 0.95 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET) VDS 20 V Gate-Source Voltage (MOSFET) VGS ± 6 V Continuous Drain Current3 (MOSFET) ID @TA=25: 1.0 A Continuous Drain Current3 (MOSFET) ID @TA=70: 0.8 A Pulsed Drain Current1 (MOSFET) IDM 8 A Reverse Voltage (Schottky) VKA 20 V Average Forward Current (Schottky) IF 0.5 A Pulsed Forward Current1 (Schottky) IFM 2.0 A Total Power Dissipation (MOSFET) PD @TA=25: 0.9 W Total Power Dissipation (Schottky) 0.9 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +125 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 (MOSFET) Max. Rthj-a 110 :/W Thermal Resistance Junction-ambient3 (Schottky) Max. 110 :/W BVDSS 20V RDS(ON) 600m ID 1A Pb Free Plating Product

GT6924E Page: 2/4 ISSUED DATE :2006/01/25 REVISED DATE : Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.02 - V/: Reference to 25 , I:D=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA Forward Transconductance gfs - 1 - S VDS=5V, ID=600mA Gate-Source Leakage Current IGSS - - ±10 uA VGS= ± 6V Drain-Source Leakage Current(Tj=25 ) : - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - 10 uA VDS=16V, VGS=0 - - 600 VGS=4.5V, ID=1A Static Drain-Source On-Resistance RDS(ON) - - 850 m VGS=2.5V, ID=0.5A Total Gate Charge2 Qg - 1.3 2 Gate-Source Charge Qgs - 0.3 - Gate-Drain (“Miller”) Change Qgd - 0.5 - nC ID=600mA VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 21 - Rise Time Tr - 53 - Turn-off Delay Time Td(off) - 100 - Fall Time Tf - 125 - Ns VDS=10V ID=600mA VGS=5V RG=3.3 RD=16.7 Input Capacitance Ciss - 38 60 Output Capacitance Coss - 17 - Reverse Transfer Capacitance Crss - 12 - pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=750mA, VGS=0V Schottky Characteristics (Tj = 25 ::::) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage Drop VF - - 0.5 V IF=500mA Maximum Reverse Leakage Current IRM - - 100 uA VR=20V Junction Capacitance CT - 21 - pF VR=10V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.:

GT6924E Page: 3/4 ISSUED DATE :2006/01/25 REVISED DATE : MOSFET Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature

GT6924E Page: 4/4 ISSUED DATE :2006/01/25 REVISED DATE : Schottky Diode Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 12. Forward Voltage Drop