GT6301K ETL | Alldatasheet
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*Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions Millimeter Dimensions REF. Min. Max. REF. Millimeter A 2.70 3.10 G 1.90 REF. B 2.60 3.00 H 1.20 REF. C 1.40 1.80 I 0.12 REF. D 0.30 0.55 J 0.37 REF. E 0 0.10 K 0.60 REF. F 0° 10° L 0.95 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±16 V Continuous Drain Current3, VGS@10V ID @TA=25: 640 mA Continuous Drain Current3, VGS@10V ID @TA=70: 500 mA Pulsed Drain Current1,2 IDM 950 mA Total Power Dissipation PD @TA=25: 1.2 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 110 :/W BVDSS 30V RDS(ON) 1 ID 640mA Pb Free Plating Product
GT6301K Page: 2/4 ISSUED DATE :2006/01/09 REVISED DATE : Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.06 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA Forward Transconductance gfs - 600 - mS VDS=10V, ID=600mA Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±16V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 100 uA VDS=24V, VGS=0 - - 1 VGS=10V, ID=500mA - - 2 VGS=4.5V, ID=400mA Static Drain-Source On-Resistance RDS(ON) - - 3 VGS=2.7V, ID=200mA Total Gate Charge2 Qg - 1 1.6 Gate-Source Charge Qgs - 0.5 - Gate-Drain (“Miller”) Change Qgd - 0.5 - nC ID=600mA VDS=50V VGS=4.5V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 56 - Fall Time Tf - 29 - ns VDS=30V ID=600mA VGS=10V RG=3.3 RD=52 Input Capacitance Ciss - 32 50 Output Capacitance Coss - 8 - Reverse Transfer Capacitance Crss - 6 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec ; 180:/W when mounted on Min. copper pad.
GT6301K Page: 3/4 ISSUED DATE :2006/01/09 REVISED DATE : Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature
GT6301K Page: 4/4 ISSUED DATE :2006/01/09 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 180