GT3585 ETL | Alldatasheet

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*Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions Millimeter Dimensions REF. Min. Max. REF. Millimeter A 2.70 3.10 G 1.90 REF. B 2.60 3.00 H 1.20 REF. C 1.40 1.80 I 0.12 REF. D 0.30 0.55 J 0.37 REF. E 0 0.10 K 0.60 REF. F 0° 10° L 0.95 REF. Absolute Maximum Ratings Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ± 12 ± 12 V Continuous Drain Current3 ID @TA=25: 3.5 -2.5 A Continuous Drain Current3 ID @TA=70: 2.8 -1.97 A Pulsed Drain Current1 IDM 10 -10 A Total Power Dissipation PD @TA=25: 1.14 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 110 /:W Pb Free Plating Product N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A

GT3585 Page: 2/7 ISSUED DATE :2006/02/16 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.02 - V/: Reference to 25 , I:D=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA Forward Transconductance gfs - 7 - S VDS=5V, ID=3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25 ) : - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - 10 uA VDS=16V, VGS=0 - - 75 VGS=4.5V, ID=3.5A Static Drain-Source On-Resistance2 RDS(ON) - - 125 m VGS=2.5V, ID=1.2A Total Gate Charge2 Qg - 4 7 Gate-Source Charge Qgs - 0.7 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=3A VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 10 - Fall Time Tf - 3 - ns VDS=15V ID=1A VGS=5V RG=3.3 RD=15 Input Capacitance Ciss - 230 370 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=20V f=1.0MHz Gate Resistance Rg - 1.1 1.7 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 16 - ns Reverse Recovery Charge Qrr - 8 - nC IS=3A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.:

GT3585 Page: 3/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.01 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) - - -1.2 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 4.0 - S VDS=-5V, ID=-2A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-16V, VGS=0 - - 120 VGS=-10V, ID=-2.8A - - 160 VGS=-4.5V, ID=-2.5A Static Drain-Source On-Resistance2 RDS(ON) - - 300 m VGS=-2.5V, ID=-2A Total Gate Charge2 Qg - 5 8 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=-2A VDS=-16V VGS=-4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 17 - Turn-off Delay Time Td(off) - 16 - Fall Time Tf - 5 - ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 Input Capacitance Ciss - 270 430 Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 55 - pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time2 Trr - 20 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-2A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.:

GT3585 Page: 4/7 ISSUED DATE :2006/02/16 REVISED DATE : Characteristics Curve N-Channel Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature

GT3585 Page: 5/7 ISSUED DATE :2006/02/16 REVISED DATE : N-Channel Fig 10. Effective Transient Thermal Impedance Fig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 180šššš/W

GT3585 Page: 6/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature

GT3585 Page: 7/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 180šššš/W