GPN2907A ETL | Alldatasheet
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Features
*Low Collect Saturation voltage. *High Speed Switching. *For Complementary Use with NPN Type GPN2222A. Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 625 mW Electrical Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO -60 - - V IC=-10uA, IE=0 BVCEO -60 - - V IC=-10mA, IB=0 BVEBO -5 - - V IC=-10uA, IC=0 ICBO - - -10 nA VCB=-50V, IC=0 ICEX - - -50 nA VCE-30V, VBE=-0.5 VCE(sat)1 - -0.2 -0.4 V IC=-150mA, IB=-15mA VCE(sat)2 - -0.5 -1.6 V IC=-500mA, IB=-50mA VBE(sat)1 - - -1.3 V IC=-150mA, IB=-15mA VBE(sat)2 - - -2.6 V IC=-500mA, IB=-50mA hFE1 75 - - VCE=-10V, IC=-100uA hFE2 100 - - VCE=-10V, IC=-1mA hFE3 100 VCE=-10V, IC=-10mA hFE4 100 180 300 VCE=-10V, IC=-150mA hFE5 50 - - VCE=-10V, IC=-500mA fT 200 - - MHZ VCE=-20V,IC=-50mA,f=100MHZ Cob - - 8 pF VCB=-10V,F=1MHZ L e1 b e SEATING PLANE A D C E TO-92
ISSUED DATE :2003/12/15 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165