GP202K ETL | Alldatasheet
Document overview
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Technical content
GP202K Page: 1/2 ISSUED DATE :2006/04/10 REVISED DATE : TPU.34)QBDLBHF* GG PP 22 00 22 KK SS UU RR FF AA CC EE MM OO UU NN TT ,, SS WW II TT CC HH II NN GG DD II OO DD EE V O LT A G E 8 0 V, C U R R E N T 0 . 1 A
Description
The GP202K is designed for ultra high speed switching. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings at T A = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55 ~ +150 : Peak Reverse Voltage VRM 80 V DC Reverse Voltage VR 80 V Mean Rectifying Current IO 100 mA Peak Forward Current IFM 300 mA Peak Forward Surge Current (1uSec) IFSM 4 A Total Power Dissipation PD 200 mW
Electrical Characteristics
(at TA = 25: unless otherwise noted) Parameter Symbol Min. Max. Unit Test Conditions Reverse Voltage VR 80 - V IR=100uA Forward Voltage VF - 1.2 V IF=100mA Reverse Current IR - 0.1 uA VR=70V Capacitance between terminals CT 3.5 pF VR=6V, f=1MHz Reverse Recovery Time Trr - 4 nS VR=6V, IF=5mA
GP202K Page: 2/2 ISSUED DATE :2006/04/10 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165