GMPSA44 ETL | Alldatasheet
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*High Breakdown Voltage: 400(Min) at IC=1mA *High current .Gain :IC=300mA at 25: *Complementary to GMPSA94 Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (Ta = 25:,unless otherwise specified) Parameter Ratings Unit Collector to Base Voltage VCBO 500 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 6 V Collect Current(DC) IC 300 mA Junction Temperature Tj +150 Storage Temperature Range TsTG -55 ~ +150 Total Power Dissipation PD 625 mW Electrical Characteristics(Ta = 25:,unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 500 - - V IC=100uA BVCEO 400 - - V IC=1mA BVEBO 6 - - V IE=10uA ICBO - - 100 nA VCB=400V IEBO - - 100 nA VEB=4V ICES - - 500 nA VCE=400V VCE(sat)1 - - 350 mV IC=1.0mA, IB=0.1mA VCE(sat)2 - - 350 mV IC=20mA, IB=2mA VCE(sat)3 - - 750 mV IC=50mA, IB=5mA VBE(sat) - - 750 mV IC=10mA, IB=1mA hFE1 40 - - VCE=10V, IC=1mA hFE2 50 - 300 VCE=10V, IC=10mA hFE3 45 - - VCE=10V, IC=50mA hFE4 40 - - VCE=10V, IC=100mA Cob - 4 6 pF VCB=20V, f=1MHz,IE=0 Classification of hFE2 Rank N SD SUM Range 50-300 70-210 120-300 TO-92
ISSUED DATE :2003/11/27 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165