GMPSA42 ETL | Alldatasheet
Document overview
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Technical content
Features
*High Collect-Emitter Breakdown Voltage *Low Collect-Emitter Saturation Voltage *Complementary to GMPSA92 Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (Ta = 25:,unless otherwise specified) Parameter Ratings Unit Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 6 V Collect Current(DC) IC 500 mA Junction Temperature Tj +150 Storage Temperature Range TsTG -55 ~ +150 Total Power Dissipation PD 625 mW
Electrical Characteristics
(Ta = 25:,unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 300 - - V IC=100uA BVCEO 300 - - V IC=1mA BVEBO 6 - - V IE=10uA ICBO - - 100 nA VCB=260V IEBO - - 100 nA VEB=6V VCE(sat) - - 350 mV IC=20mA, IB=2mA VBE(sat) - - 900 mV IC=20mA, IB=2mA hFE1 25 - - VCE=10V, IC=1mA hFE2 40 - - VCE=10V, IC=10mA hFE3 40 - - VCE=10V, IC=30mA fT 50 - - MHz VCB=20V, IC=10mA, f=100MHz Cob - - 3 pF VCB=20V, f=1MHz,IE=0 Classification of Rank Rank hFE1 hFE2 hFE3 VCE(sat) NS >80 >120 >120 <200mV N >25 >40 >40 <350mV TO-92
ISSUED DATE :2003/11/27 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165