GMPSA27 ETL | Alldatasheet
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ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B L e1 b e S E A T IN G P L A N E A D C S 1 E GMPSA27 NN PP NN SS II LL II CC OO NN DD AA RR LL II NN GG TT OO NN TT RR AA NN SS II SS TT OO RR
Description
The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA. Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCES 60 V Emitter to Base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA ,IE=0 BVCES 60 - - V IC=100uA ,VBE=0 BVEBO 10 - - V IE=10uA ,IC=0 ICBO - - 100 nA VCB=50V, IE = 0 ICES - - 500 nA VCE=50V IEBO - - 100 nA VEB=10V, Ic = 0 *VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA VBE(on) - - 2 V VCE=5V ,IC=100mA *hFE1 10K - - VCE=5V, IC=10mA *hFE2 10K - - VCE=5V, IC=100mA Pulse Test: Pulse Width 380us, Duty Cycle 2% TO-92
ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165