GMPSA13 ETL | Alldatasheet
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*High D.C. Current Gain *Complementary to GMPSA63 Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCES 30 V Emitter to Base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 30 - - V IC=100uA ,IE=0 BVCES 30 - - V IC=100uA ,VBE=0 BVEBO 10 - - V IE=10uA ,IC=0 ICBO - - 100 nA VCB=30V, IE = 0 IEBO - - 100 nA VEB=10V, Ic = 0 *VCE(sat)1 - - 1.5 V IC=100mA, IB=0.1mA *VCE(sat)2 - 1.0 - V IC=500mA, IB=0.5mA *hFE1 5 - - K VCE=5V, IC=10mA *hFE2 10 - - K VCE=5V, IC=100mA *hFE3 - 50 - K VCE=5V, IC=500mA fT 125 - - MHz VCE=5V, IC=10mA, f=100MHz Cob - - 6 pF VCB=10V, IE = 0,f=1MHz Pulse Test: Pulse Width 380us, Duty Cycle ¯% TO-92
ISSUED DATE :2004/08/19 REVISED DATE :2004/11/29B Characteristics Curve
ISSUED DATE :2004/08/19 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165