GMBT2222A ETL | Alldatasheet

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&High frequency current gain &High speed switching &For complementary use with PNP type GMBT2907A Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage at Ta=25: VCBO 75 V Collector to Emitter Voltage at Ta=25: VCEO 40 V Emitter to Base Voltage at Ta=25: VEBO 6 V Collector Current at Ta=25: IC 600 mA Total Power Dissipation at Ta=25: PD 225 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V IC=100uA , IE=0 BVCEO 40 - - V IC=10mA, IB=0 BVEBO 6 - - V IE=10uA, IC=0 ICBO - - 10 nA VCB=60V, IE=0 ICEX - - 10 nA VCE=60V ,VEB(OFF)=3V IEBO - - 10 nA VEB=3V, IC=0 *VCE(sat)1 - - 500 mV IC=380mA, IB=10mA *VCE(sat)2 - - 1.0 V IC=500mA, IB=50mA *VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA *VBE(sat)2 - - 2.0 V IC=500mA, IB=50mA *hFE1 35 - - VCE=10V, IC=100uA *hFE2 50 - - VCE=10V, IC=1mA *hFE3 75 - - VCE=10V, IC=10mA *hFE4 100 - 300 VCE=10V, IC=150mA *hFE5 40 - - VCE=10V, IC=500mA fT 300 - - MHz VCB=20V, IC=20mA, f=100MHz Cob - - 8 pF VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2%

ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Switching Characteristics Symbol Min. Typ. Max. Unit Test Conditions td (Delay Time) - - 10 ns tr (Rise Time) - - 25 ns VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA ts (Storage Time) - - 225 ns tf (Fall Time) - - 60 ns VCC=30V, IC=150mA, IB1=IB2=15mA Switching Time Equivalent Test Circuits Characteristics Curve Turn-On Time Turn-Off Time Fig 1. DC Current Gain Fig 2. Collector saturation Region

ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Fig 3. Turn-On Time Fig 5. Frequency Effects Fig 6. Source Resistance Effects Fig 7. Capacitance Fig 8. Current-Gain Bandwidth Product Fig 4. Turn-Off Time

ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. “ On” Voltage Fig 10. Temperature Coefficients