GMBT1815 ETL | Alldatasheet
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Technical content
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Description
The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current IC 150 mA Total Power Dissipation PD 250 mW Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCB=60V IEBO - - 100 nA VEB=5V VCE(sat) - - 250 mV IC=100mA, IB=10mA VBE(sat) - - 1.0 V IC=100mA, IB=10mA hFE1 120 - 700 VCE=6V, IC=2mA hFE2 25 - - VCE=6V, IC=150mA hFE3 80 - - VCE=1V, IC=10mA fT 80 - - MHz VCE=10V, IC=1mA, f=100MHz Cob - - 3.5 pF VCB=10V, f=1MHz Classification of hFE1 Rank C4Y C4G C4B Range 120 - 240 200 - 400 350 - 700
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