GMBT1132 ETL | Alldatasheet
Document overview
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Technical content
Features
&Low VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA) Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Current (DC) IC -1 A Collector Current (Pulse) IC -2 A Total Power Dissipation PD 225 mW
Electrical Characteristics
(Ta = 25:,unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V IC=-50uA , IE=0 BVCEO -32 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-50uA ,IC=0 ICBO - - -500 nA VCB=-20V, IE=0 IEBO - - -500 nA VEB=-4V, IC=0 *VCE(sat) - -200 -500 mV IC=-500mA, IB=-50mA *hFE 82 - 390 VCE=-3V, IC=-100mA fT - 150 - MHz VCE=-5V, IC=-50mA, f=30MHz Cob - 20 30 pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE Rank B32P B32Q B32R Range 82 - 180 120 - 270 180 - 390
ISSUED DATE :2005/06/28 REVISED DATE : Characteristics Curve
ISSUED DATE :2005/06/28 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165