GMBT1036 ETL | Alldatasheet
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&ICMax.=-500mA &Low VCE(sat). Optimal for low voltage operation. &Complementary to GMBT2411 Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55~+150 : Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Electrical Characteristics (Ta = 25 ,: unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V IC=-100uA , IE=0 BVCEO -32 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-100uA ,IC=0 ICBO - - -1 uA VCB=-20V, IE=0 IEBO - - -1 uA VEB=-4V, IC=0 *VCE(sat) - - -400 mV IC=-100mA, IB=-10mA *hFE 82 - 390 VCE=-3V, IC=-10mA fT - 200 - MHz VCE=-5V, IE=20mA, f=100MHz Cob - 7 - pF VCB=-10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width=300s, Duty Cycle 2% Classification Of hFE Rank HP HQ HR Range 82 - 180 120 - 270 180 - 390
GMBT1036 Page: 2/2 ISSUED DATE :2006/09/14 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165