GMBD1201-A-C-S ETL | Alldatasheet

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Technical content

ISSUED DATE :2005/07/01 REVISED DATE : TPU.34)QBDLBHF* GGMM BB DD 11 22 00 11 \\\\ AA\\\\ CC \\\\ SS S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 1 0 0 V, C U R R E N T 2 0 0 m A

Description

The GMBD1201\\A\\C\\S are general purpose for small signal diodes. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings (TA = 25: ) Parameter Symbol Ratings Unit Max. Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA

1 Non-Repetitive Peak Forward surge Current @1s

@1ms IFSM 2 A Power Dissipation PD 350 mW Thermal Resistance Junction to Ambient Air RJA 357 /W: Storage Temperature Range TSTG -55 ~ +150 : Operating Junction Temperature TJ +150 :

Electrical Characteristics

(TA = 25:) Characteristics Symbol Min. Typ. Max. Unit Test Conditions Breakdown Voltage VR 100 - - V IR=100uA - 700 800 mV IF=1mA - 800 900 mV IF=10mA - 1.1 1.2 V IF=100mA - 1.2 1.3 V IF=200mA Forward Voltage VF - 1.3 1.4 V IF=300mA - - 25 nA VR=20V - - 50 nA VR=50V Reverse Current IR - - 5.0 uA VR=50V, TA=150: Total Capacitance CT - - 2.0 pF VR=0, f=1.0MHz Reverse Recovery Time trr - - 4.0 ns IF=IR=10mA, IRR=1mA, RL=100

ISSUED DATE :2005/07/01 REVISED DATE : Characteristics Curve Fig 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100uA Fig 2. Reverse Current vs. Reverse Voltage IR - 10 to 100V Fig 3. Forward Voltage vs. Forward Current VF - 1.0 to 100uA Fig 4. Forward Voltage vs. Forward Current VF - 0.1 to 10mA Fig 5. Forward Voltage vs. Forward Current VF - 10 to 800mA Fig 6. Total Capacitance vs. Reverse Voltage 110 R F

ISSUED DATE :2005/07/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 100 200 300 400 500 0 50 100 150 200 Average Temperature, Io[ ] Power Dissipation, PD[mW] Fig 7. Reverse Recovery Time vs. Reverse Current TRR - IR 10 to 60mA Fig 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature(TA) Fig 9. Power Derating Curve