GMBCX53 ETL | Alldatasheet
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&Collector-Emitter Voltage: VCEO=-80V &Complementary to GMBCP56 Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5° TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Range TsTG -65 ~ +150 : Collector to Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -80 V Emitter to Base Voltage VEBO -5 V Collect Current(DC) IC 1 A Total Power Dissipation PD 1.2 W Electrical Characteristics (Ta = 25:) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -100 - - V IC=-100uA, IE=0 BVCEO -80 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-10uA, IC=0 ICBO - - -100 nA VCB=-30V, IE=0 IEBO - - -100 nA VEB=-5V, IC=0 *VCE(sat)1 - - -500 mV IC=-500mA, IB=-50mA *VBE(on) - - -1000 mV IC=-500mA, VCE=-2V, *hFE1 63 - - VCE=-2V, IC=-5mA *hFE2 63 - 250 VCE=-2V, IC=-150mA *hFE3 40 - - VCE=-2V, IC=-500mA fT 100 - - MHz VCE=-5V, IC=-10mA, f=100MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE2 Rank A B Range 63 - 160 100 - 250 SOT-89
ISSUED DATE :2005/04/04 REVISED DATE :2005/11/21C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165