GM4672 ETL | Alldatasheet
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&Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA &Excellent DC current gain characteristics Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings (TA=25 ):::: Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current (DC) IC 2 A Collector Current (Pulse PW=10ms) IC 5 A Total Device Dissipation PD 2 W Junction Temperature TJ 150 : Storage Temperature Tstg -55 ~ +150 : Electrical Characteristics (TA = 25: unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=50uA, IE=0 BVCEO 50 - - V IC=1mA, IB=0 BVEBO 6 - - V IE=50uA, IC=0 ICBO - - 100 nA VCB=60V, IE=0 IEBO - - 100 nA VEB=5V, IC=0 *VCE(sat) - 0.1 0.35 V IC=1A, IB=50mA *hFE 120 - 400 VCE=2V, IC=500mA fT - 210 - MHz VCE=2V, IE=500mA, f=100MHz Cob - 25 - pF VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE Rank A B Range 120 ~ 240 200 ~ 400 SOT-89
ISSUED DATE :2004/01/27 REVISED DATE :2005/07/28B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165