GM4401 ETL | Alldatasheet

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&Complementary to GM4403 &High Power Dissipation: 1W at 25 &High DC Current Gain: 100-300 at 150mA Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage at Ta=25: VCBO 60 V Collector to Emitter Voltage at Ta=25: VCEO 40 V Emitter to Base Voltage at Ta=25: VEBO 5 V Collector Current at Ta=25: IC 600 mA Total Power Dissipation at Ta=25: PD 1 W Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA BVCEO 40 - - V IC=1mA BVEBO 5 - - V IE=10uA ICEX - - 100 nA VCE=35V, VBE= 0.4V *VCE(sat)1 - - 400 mV IC=150mA, IB=15mA *VCE(sat)2 - - 750 mV IC=500mA, IB=50mA *VBE(sat)1 750 - 950 mV IC=150mA, IB=15mA *VBE(sat)2 - - 1.2 V IC=500mA, IB=50mA *hFE1 20 - - VCE=1V, IC=0.1mA *hFE2 40 - - VCE=1V, IC=1mA *hFE3 80 - - VCE=1V, IC=10mA *hFE4 100 - 300 VCE=1V, IC=150mA *hFE5 40 - - VCE=2V, IC=500mA fT 250 - - MHz VCE=10V, IC=20mA, f=100MHz Cob - - 6.5 pF VCB=5V, f=1MHz Classification Of hFE4 * Pulse Test: Pulse Width 380s, Duty Cycle 2% Rank A B Range 100-210 190-300 SOT-89

ISSUED DATE :2004/12/17 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165