GM4132 ETL | Alldatasheet
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&High breakdown voltage (BVCEO=120V) &Low collector output capacitance (Typ. 20pF at VCB=10V) &High transition frequency (fT=80MHz) Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5° TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55~+150 : Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Collector Current (DC) IC 2 A Collector Current (Pulse 10ms) IC 3 A Total Power Dissipation PD 1.2 W Electrical Characteristics (Ta = 25:, unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 120 - - V IC=50uA , IE=0 BVCEO 120 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=50uA ,IC=0 ICBO - - 1 uA VCB=100V, IE=0 IEBO - - 1 uA VEB=4V, IC=0 *VCE(sat) - - 400 mV IC=1A, IB=100mA *hFE 82 - 390 VCE=5V, IC=100mA fT - 80 - MHz VCE=5V, IE=-100mA, f=30MHz Cob - 20 - pF VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE Rank P Q R Range 82 ~ 180 120 ~ 270 180 ~ 390 SOT-89
GM4132 Page: 2/2 ISSUED DATE :2006/02/06 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165