GM3019 ETL | Alldatasheet
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Description
The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 140 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 7 V Collector Current IC 1 A Total Power Dissipation PD 1 W Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 140 - - V IC=100uA , IE=0 BVCEO 80 - - V IC=30mA. IB=0 BVEBO 7 - - V IE=100uA, IC=0 ICBO - - 50 nA VCB=90V IEBO 50 nA VBE=5V VCE(sat) - - 200 mV IC=150mA, IB=15mA VBE(sat) - - 1.1 V IC=150mA, IB=15mA hfe1 50 - - VCE=10V, IC=0.1mA hfe2 90 - - VCE=10V, IC=10mA hfe3 100 - 300 VCE=10V, IC=150mA hfe4 50 VCE=10V, IC=500mA hfe5 15 VCE=10V, IC=1000mA Cob - - 12 pF VCB=10V, ,IE=0V,f=1MHz fT 100 - - MHz VCE=50V, IC=50mA, f=100MHz Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165