GM194 ETL | Alldatasheet
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&60 Volt VCEO &1 Amp continuous current &Complementary to GM195 Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55~+150 : Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 5 V Collector Current (DC) IC 1 A Collector Current (Pulse) IC 2 A Base Current IB 200 mA Total Power Dissipation PD 1 W Electrical Characteristics (Ta = 25:, unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 80 - - V IC=100uA , IE=0 *BVCEO 60 - - V IC=10mA, IB=0 BVEBO 5 - - V IE=100uA ,IC=0 ICBO - - 100 nA VCB=60V, IE=0 ICES - - 100 nA VCES=60V IEBO - - 100 nA VEB=4V, IC=0 *VCE(sat)1 - - 0.25 V IC=500mA, IB=50mA *VCE(sat)2 - - 0.5 V IC=1A, IB=100mA *VBE(sat) - - 1.1 V IC=1A, IB=100mA *VBE(on) - - 1.0 V VCE=5V, IC=1A *hFE1 100 - VCE=5V, IC=1mA *hFE2 100 - 300 VCE=5V, IC=500mA *hFE3 80 - VCE=5V, IC=1A *hFE4 30 - VCE=5V, IC=2A fT 150 - - MHz VCE=10V, IC=50mA, f=100MHz Cob - - 10 pF VCB=10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width=300s, Duty Cycle 2% SOT-89
GM194 Page: 2/2 ISSUED DATE :2005/10/06 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165