GM1426 ETL | Alldatasheet
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&hFE=160~390 (@VCE=-2V, IC=-100mA) &Low Saturation Voltage VCE(sat)=-0.5 (Max.) (@IC=-2A, IB=-100mA) Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5° TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55~+150 : Collector to Base Voltage VCBO -20 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -6 V Collector Current (DC) IC -3 A Total Power Dissipation PD 1.2 W Electrical Characteristics (Ta = 25 ,: unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -20 - - V IC=-50uA , IE=0 BVCEO -20 - - V IC=-1mA, IB=0 BVEBO -6 - - V IE=-10uA ,IC=0 ICBO - - -100 nA VCB=-20V, IE=0 ICES - - -100 nA VCES=-20V IEBO - - -100 nA VEB=-5V, IC=0 *VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-100mA *hFE 160 260 390 VCE=-2V, IC=-100mA fT - 240 - MHz VCE=-2V, IC=-0.5A, f=100MHz Cob - 35 - pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2% SOT-89
GM1426 Page: 2/2 ISSUED DATE :2006/03/14 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165