GE09N70

GE09N70 ETL | Alldatasheet

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*Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Speed Package Dimensions A 4.40 4.80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e 2.54 REF. E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage - /A/H VDS 600/650/700 V Gate-Source Voltage VGS f20 V Continuous Drain Current , VGS@10V ID @TC=25: 9 A Continuous Drain Current , VGS@10V ID @TC=100: 5 A Pulsed Drain Current1 IDM 40 A Total Power Dissipation PD @TC=25: 156 W Linear Derating Factor 1.25 W/ Single Pulse Avalanche Energy2 EAS 305 mJ Avalanche Current IAR 9 A Repetitive Avalanche Energy EAR 9 mJ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rthj-c 0.8 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W BVDSS 600/650/700V RDS(ON) 0.75 ID 9A Pb Free Plating Product

ISSUED DATE :2005/04/21 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions 600 - - V VGS=0, ID=250uA - 650 - - V VGS=0, ID=250uA A Drain-Source Breakdown Voltage BVDSS 700 - - V VGS=0, ID=250uA H Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.6 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 4.5 - S VDS=50V, ID=4.5A Gate-Source Leakage Current IGSS - - D1 uA VGS= D20V Drain-Source Leakage Current(Tj=25:) - - 100 uA VDS=600V, VGS=0 Drain-Source Leakage Current(Tj=150:) IDSS - - 500 uA VDS=480V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - - 0.75 Ł VGS=10V, ID=4.5A Total Gate Charge3 Qg - 44 - Gate-Source Charge Qgs - 11 - Gate-Drain (“Miller”) Change Qgd - 12 - nC ID=9A VDS=480V VGS=10V Turn-on Delay Time3 Td(on) - 19 - Rise Time Tr - 21 - Turn-off Delay Time Td(off) - 56 - Fall Time Tf - 24 - ns VDD=300V ID=9A VGS=10V RG=10Ł RD=34Ł Input Capacitance Ciss - 2660 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 10 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage3 VSD - - 1.5 V IS=9A, VGS=0V, Tj=25: Continuous Source Current (Body Diode) IS - - 9 A VD= VG=0V, VS=1.5V Pulsed Source Current (Body Diode)1 ISM - - 40 A Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25:, VDD=50V, L=6.8mH, RG=25Ł, IAS=9A. 3. Pulse width 300us, duty cycle 2%.

ISSUED DATE :2005/04/21 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation

ISSUED DATE :2005/04/21 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature

ISSUED DATE :2005/04/21 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform