GE08P20 ETL | Alldatasheet
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*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Package Dimensions A 4.40 4.80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e 2.54 REF. E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25: -8 A Continuous Drain Current, VGS@10V ID @TC=100: -5 A Pulsed Drain Current1 IDM -30 A Total Power Dissipation PD @TC=25: 96 W Linear Derating Factor 0.77 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rthj-c 1.3 :/W Thermal Resistance Junction-ambient Max. Rthj-a 62 :/W BVDSS -200V RDS(ON) 680m ID -8A Pb Free Plating Product
GE08P20 Page: 2/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -200 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.03 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) -2.0 - -4.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 4 - S VDS=-10V, ID=-5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25:) - - -25 uA VDS=-200V, VGS=0 Drain-Source Leakage Current(Tj=150:) IDSS - - -100 uA VDS=-160V, VGS=0 Static Drain-Source On-Resistance2 RDS(ON) - - 680 m VGS=-10V, ID=-4A Total Gate Charge2 Qg - 20 32 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 13 - nC ID=-5A VDS=-160V VGS=-4.5V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 14 - Turn-off Delay Time Td(off) - 64 - Fall Time Tf - 28 - ns VDS=-100V ID=-5A VGS=-10V RG=10 RD=20 Input Capacitance Ciss - 1210 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 45 - pF VGS=0V VDS=-25V f=1.0MHz Gate Resistance Rg - 3.6 5.4 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.3 V IS=-5A, VGS=0V Reverse Recovery Time2 Trr - 165 - ns Reverse Recovery Charge Qrr - 1420 - nC IS=-5A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%.
GE08P20 Page: 3/4 ISSUED DATE :2006/01/19 REVISED DATE : Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature
GE08P20 Page: 4/4 ISSUED DATE :2006/01/19 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform