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Document overview

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Technical content

Features

  • Gen5 Thin Chip T echnology for Low V
  • Low Conduction Losses for All Load Conditions
  • Superior Figure of Merit Q /I
  • Enhanced Surge Current Robustness
  • Low Thermal Resistance
  • T emperature Independent Fast Switching
  • Positive T emperature Coefficient of V
  • High dV/dt Ruggedness Package K A Case RoHS REACH TO-252-2 Advantages
  • Optimal Price Performance
  • Improved System Efficiency
  • Enables Extremely Fast Switching
  • Reduced Cooling Requirements
  • Increased System Power Density
  • Zero Reverse Recovery Current
  • Easy to Parallel without Thermal Runaway
  • High System Reliability

Applications

  • Switched Mode Power Supply (SMPS)
  • Solar Inverter
  • Server and T elecom Power Supply
  • Battery Charger
  • Uninterruptible Power Supply (UPS)
  • Motor Control
  • Power Factor Correction (PFC) Absolute Maximum Ratings (At T = 25°C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 650 V Continuous Forward Current I T = 100°C, D = 1 21 A Fig. 4 T = 135°C, D = 1 15 T = 162°C, D = 1 8 Non-Repetitive Peak Forward Surge Current, Half Sine Wave I T = 25°C, t = 10 ms 44 A T = 150°C, t = 10 ms 36 Repetitive Peak Forward Surge Current, Half Sine Wave I T = 25°C, t = 10 ms 27 A T = 150°C, t = 10 ms 19 Non-Repetitive Peak Forward Surge Current I T = 25°C, t = 10 µs 220 A i t Value ∫i dt T = 25°C, t = 10 ms 9.68 A s Non-Repetitive Avalanche Energy E L = 3.3 mH, I = 8 A 105 mJ Diode Ruggedness dV/dt V = 0 ~ 520 V 200 V/ns Power Dissipation P T = 25°C 161 W Fig. 3 Operating and Storage Temperature T , T -55 to 175 °C RRM F (T = 162°C)C C F C F F C RRM F C C C F ,SM C P C P F ,RM C P C P F ,MAX C P 2 2 C P 2 AS AS R TOT C j stg Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E.pdf Page 1 of 7

650V 8A SiC Schottky MPS™ Diode TM

Electrical Characteristics

Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Diode Forward Voltage V I = 8 A, T = 25°C 1.25 1.35 V Fig. 1 I = 8 A, T = 150°C 1.64 Reverse Current I V = 650 V , T = 25°C 1 5 µA Fig. 2 V = 650 V , T = 150°C 56 Total Capacitive Charge Q I ≤ I dI /dt = 200 A/µs V = 200 V 14 nC Fig. 7 V = 400 V 20 Switching Time t V = 200 V < 10 ns V = 400 V Total Capacitance C V = 1 V , f = 1MHz 373 pF Fig. 6 V = 400 V , f = 1MHz 26 Thermal/Package Characteristics Parameter Symbol Conditions Values Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.93 °C/W Fig. 9 Weight W 0.3 g F F j F j R R j R j C F F ,MAX F R R S R R R R thJC T Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E.pdf Page 2 of 7

650V 8A SiC Schottky MPS™ Diode TM Package Dimensions 0.265 (6.73) 0.215 (5.46) 0.245 (6.22) 0.050 (1.27) 0.409 (10.40) 0.045 (1.14) 0.035 (0.88)

0.090 BSC

0.180 BSC

0.094 (2.38) 0.023 (0.58) SEATING 0.005 (0.127) max 0.070 (1.77)

0.020 BSC

0.205 (5.21) 0.173 (4.40)

0.1080 REF

0.023 (0.58) 0.236 (6.00) 0.030 (0.77) (2.286 BSC) (4.572 BSC) 0.252 (6.40) 0.370 (9.40) 0.025 (0.64) PLANE 0.087 (2.20) 0.018 (0.46) 0.055 (1.40) (0.508 BSC) min min (2.743 REF) 0.018 (0.46) Recommended Solder Pad Layout 0.236 (6.00) 0.118 (3.00) 0.256 (6.50) 0.246 (6. 25) Package View AK Case (K)Case (K) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E.pdf Page 6 of 7

650V 8A SiC Schottky MPS™ Diode TM Compliance RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links

  • SPICE Models: https:/ /www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E_SPICE.zip
  • PLECS Models: https:/ /www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E_PLECS.zip
  • CAD Models: https:/ /www.genesicsemi.com/sic-schottky-mps/GE08MPS06E/GE08MPS06E_3D.zip
  • Evaluation Boards: https:/ /www.genesicsemi.com/technical-support
  • Reliability: https:/ /www.genesicsemi.com/reliability
  • Compliance: https:/ /www.genesicsemi.com/compliance
  • Quality Manual: https:/ /www.genesicsemi.com/quality

Revision History

Date Revision Comments Supersedes Jul. 27, 2020 Rev 1 Initial Release www.genesicsemi.com/sic-schottky-mps/ Jul. 20 Rev 1 Published by GeneSiC Semiconductor, Inc. Copyright© 2020 GeneSiC Semiconductor Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA All Rights Reserved. Page 7 of 7